| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
15A,500VN-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
15A500VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司 | WXDH | ||
N-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
50VN-ChannelMOSFET | DIODES Diodes Incorporated | DIODES | ||
15A500VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司 | WXDH | ||
15A500VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司 | WXDH | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
15A,500V,0.38Ohm,N-ChannelSMPSPowerMOSFET Features ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ?ReducedrDS(ON) ?ReducedMillerCapacitanceandLowInputCapacitance ?ImprovedSwitchingSpeedwithLowEMI ?175°CRatedJunctionTemperature Applications | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelSMPSPowerMOSFET Features ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ●ReducedrDS(ON) ●ReducedMillerCapacitanceandLowInputCapacitance ●ImprovedSwitchingSpeedwithLowEMI | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
15A,500V,0.38Ohm,N-ChannelSMPSPowerMOSFET Features ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ?ReducedrDS(ON) ?ReducedMillerCapacitanceandLowInputCapacitance ?ImprovedSwitchingSpeedwithLowEMI ?175°CRatedJunctionTemperature Applications | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
15A,500V,0.38Ohm,N-ChannelSMPSPowerMOSFET Features ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ?ReducedrDS(ON) ?ReducedMillerCapacitanceandLowInputCapacitance ?ImprovedSwitchingSpeedwithLowEMI ?175°CRatedJunctionTemperature Applications | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
500VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
500VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
15A500VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司 | WXDH | ||
N-ChannelSMPSPowerMOSFET Features ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness ●ReducedrDS(ON) ●ReducedMillerCapacitanceandLowInputCapacitance ●ImprovedSwitchingSpeedwithLowEMI | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=500V,ID=15A ?Drain-SourceONRes | KECKEC CORPORATION KEC株式會社 | KEC | ||
N-ChannelEnhancementModePowerMOSFET | BWTECH Bruckewell Technology LTD | BWTECH |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
WG |
23+ |
TO220F |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
24+ |
N/A |
57000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
WG |
2024+ |
TO-220F/251/252 |
188600 |
全新原廠原裝正品現(xiàn)貨 歡迎咨詢 |
詢價 | ||
CETC |
23+ |
標(biāo)準(zhǔn)封裝 |
1050 |
原廠直銷直銷IGBT模塊 可控硅模塊 sic碳化硅模塊 |
詢價 | ||
WG |
2012 |
TO-220F |
435 |
原裝正品現(xiàn)貨 |
詢價 |
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