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02N120

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ?40lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedfor: ???-Motorcontrols ???-Inverter ???-SMPS ?NPT-Technologyoffers: ???-verytightparameterdistributi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IXTP02N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=0.2A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedfo

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP02N120P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTY02N120P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=0.2A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTY02N120P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

SGB02N120

FastIGBTinNPT-technologyLowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB02N120

FastS-IGBTinNPT-technology

FastS-IGBTinNPT-technology ?40lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedfor: ??-Motorcontrols ??-Inverter ??-SMPS ?NPT-Technologyoffers: ??-verytightparameterdistribution ??-highruggedness,temperaturestablebehavio

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGD02N120

FastIGBTinNPT-technology

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=3.6V@IC=2A ·HighCurrentCapability ·HighInputImpedance ·Lowthermalresistance APPLICATIONS ·SynchronousRectificationinSMPS ·MotorDrives ·UPS,PFC ·Generalpurposeinverter

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SGD02N120

FastS-IGBTinNPT-technology

FastS-IGBTinNPT-technology ?40lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedfor: ??-Motorcontrols ??-Inverter ??-SMPS ?NPT-Technologyoffers: ??-verytightparameterdistribution ??-highruggedness,temperaturestablebehavio

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGD02N120

FastIGBTinNPT-technology40lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGI02N120

FastIGBTinNPT-technology40lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGI02N120

FastS-IGBTinNPT-technology

FastS-IGBTinNPT-technology ?40lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedfor: ??-Motorcontrols ??-Inverter ??-SMPS ?NPT-Technologyoffers: ??-verytightparameterdistribution ??-highruggedness,temperaturestablebehavio

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGP02N120

IGBT

DESCRIPTION ·Fastswitching ·LowSwitchingLosses APPLICATIONS ·Motorcontrols ·Inverter ·SMPS

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SGP02N120

FastS-IGBTinNPT-technology

FastS-IGBTinNPT-technology ?40lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedfor: ??-Motorcontrols ??-Inverter ??-SMPS ?NPT-Technologyoffers: ??-verytightparameterdistribution ??-highruggedness,temperaturestablebehavio

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGP02N120

FastIGBTinNPT-technology40lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW02N120

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW02N120

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB02N120

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode Allowednumberofshortcircuits:1s. ?lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforfrequencyinvertersforwashingmachi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB02N120

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode Allowednumberofshortcircuits:1s. ?lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10?s ?Designedforfrequencyinvertersfor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SKB02N120

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ?40lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedfor: ???-Motorcontrols ???-Inverter ???-SMPS ?NPT-Technologyoffers: ???-verytightparameterdistributi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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24+
TO-252
200
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I
23+
SOT-252
10000
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09
24+
TO-263
3750
原裝現(xiàn)貨假一賠十
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I
22+
SOT-252
6000
十年配單,只做原裝
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I
23+
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6000
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INFINEON
23+
TO-252
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
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INFINEON
23+
TO-252
8000
只做原裝現(xiàn)貨
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INFINEON
23+
TO-252
7000
詢價(jià)
I
24+
SOT-252
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
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UTC
20232024
TO252
6000
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更多02N120供應(yīng)商 更新時(shí)間2024-12-25 10:50:00

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