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1N68

GOLD BONDED DIODES

[VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime

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未分類制造商

1N6815

LOW VOLTAGE DROP SCHOTTKY DIODE

Features ?Tungsten/PlatinumschottkybarrierforverylowVF ?Oxidepassivatedstructureforverylowleakagecurrents ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofileceramicsurfacemoun

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N6815R

LOW VOLTAGE DROP SCHOTTKY DIODE

Features ?Tungsten/PlatinumschottkybarrierforverylowVF ?Oxidepassivatedstructureforverylowleakagecurrents ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofileceramicsurfacemoun

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N6816

LOW LEAKAGE SCHOTTKY DIODE

Features ?Tungstenschottkybarrier ?Oxidepassivatedstructureforverylowleakagecurrents ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage ?Lowpa

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N6816R

LOW LEAKAGE SCHOTTKY DIODE

Features ?Tungstenschottkybarrier ?Oxidepassivatedstructureforverylowleakagecurrents ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage ?Lowpa

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N6817

LOW REVERSE LEAKAGE SCHOTTKY DIODE

LOWREVERSELEAKAGESCHOTTKYDIODE 100Volts25Amps Features ?Tungstenschottkybarrier ?Oxidepassivatedstructure ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofile

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N6817R

LOW REVERSE LEAKAGE SCHOTTKY DIODE

LOWREVERSELEAKAGESCHOTTKYDIODE 100Volts25Amps Features ?Tungstenschottkybarrier ?Oxidepassivatedstructure ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofile

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N6818

LOW VOLTAGE DROP SCHOTTKY DIODE

Features ?Tungsten/PlatinumschottkybarrierforverylowVF ?Oxidepassivatedstructureforverylowleakagecurrents ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofileceramicsurfacemoun

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N6818R

LOW VOLTAGE DROP SCHOTTKY DIODE

Features ?Tungsten/PlatinumschottkybarrierforverylowVF ?Oxidepassivatedstructureforverylowleakagecurrents ?Guardringprotectionforincreasedreverseenergycapability ?Epitaxialstructureminimizesforwardvoltagedrop ?Hermeticallysealed,lowprofileceramicsurfacemoun

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N6819

LOW LEAKAGE CURRENT SCHOTTKY DIODE

Features ●Tungstenschottkybarrier ●Oxidepassivatedstructureforverylowleakagecurrents ●Guardringprotectionforincreasedreverseenergycapability ●Epitaxialstructureminimizesforwardvoltagedrop ●Hermeticallysealed,lowprofileceramicsurfacemountpowerpackage ●Lowpa

MicrosemiMicrosemi Corporation

美高森美美高森美公司

詳細(xì)參數(shù)

  • 型號(hào)：

    1N68

  • 功能描述：

    GOLD BONDED DIODES

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
24+
SMD
1680
IR專營品牌進(jìn)口原裝現(xiàn)貨假一賠十
 詢價(jià)
VMI
24+
N/A
8000
一級代理現(xiàn)貨、保證進(jìn)口原裝正品假一罰十價(jià)格合理
 詢價(jià)
Microsemi
1942+
N/A
908
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價(jià)
CDI-DIODE
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
INFINEON/英飛凌
2447
20
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價(jià)
MICROSEMI
1809+
SMD
326
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
VMI
2022+
DIP
8000
只做原裝支持實(shí)單,有單必成。
 詢價(jià)
MSC
7
公司優(yōu)勢庫存 熱賣中!!!
 詢價(jià)
23+
SOT23-5
452585
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
 詢價(jià)
IR
22+
N/A
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
更多1N68供應(yīng)商 更新時(shí)間2025-4-15 17:13:00

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