MBC13720NT1

Marking：20N；Package：SOT-363；SiGe:C Low Noise Amplifier with Bypass Switch

20N06

Marking：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS=60V,ID=20A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology ExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired

20N06

Marking：20N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

GeneralDescription The20N06usesadvancedtrenchtechnologyanddesignto provideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications. Features VDS=60V,ID=20A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology

20N06

Marking：20N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The20N06usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

HGTG20N60A4D

Marking：20N60A4D；Package：TO-247；SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V

TheHGTG20N60A4DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThisdevicehasthehighinputimpedanceofaMOSFET andthelowon?stateconductionlossofabipolartransistor.Themuch loweron?statevoltagedropvariesonlymode

IPD20N03L

Marking：20N03L；Package：TO-252-3-1；OptiMOS Buck converter series

OptiMOSBuckconverterseries Feature ?N-Channel ?LogicLevel ?LowOn-ResistanceRDS(on) ?ExcellentGateChargexRDS(on)product(FOM) ?Superiorthermalresistance ?175°Coperatingtemperature ?Avalancherated ?dv/dtrated ?Idealforfastswitchingbuckconverters

IPD20N03LG

Marking：20N03L；Package：PG-TO252-3；OptiMOS??Buck converter series

Feature ?N-Channel ?LogicLevel ?ExcellentGateChargexRDS(on)product(FOM) ?175°Coperatingtemperature ?dv/dtrated ?Idealforfastswitchingbuckconverters ?Pb.freeleadplating,RoHScompliant

NCE20NP1006S

Marking：20NP1006S；Package：SOP-8；N and P-Channel Enhancement Mode Power MOSFET

Description TheNCE20NP1006Susesadvancedtrenchtechnologyto provideexcellentRDS(ON)andlowgatecharge.The complementaryMOSFETsmaybeusedtoformalevelshifted highsideswitch,andforahostofotherapplications. GeneralFeatures ●N-Channel VDS=20V,ID=10A RDS(ON)

NTD20N03

Marking：20N03L；Package：TO-252；30V N-Channel MOSFET

Features ?Ultra?LowRDS(on),SingleBase,AdvancedTechnology ?SPICEParametersAvailable ?DiodeisCharacterizedforuseinBridgeCircuits ?IDSSandV(on)SpecifiedatElevatedTemperatures ?HighAvalancheEnergySpecified TypicalApplications ?PowerSupplies ?InductiveLoads ?

NTD20N03L27T4G

Marking：20N03L；Package：TO-252；30V N-Channel MOSFET

Features ?Ultra?LowRDS(on),SingleBase,AdvancedTechnology ?SPICEParametersAvailable ?DiodeisCharacterizedforuseinBridgeCircuits ?IDSSandV(on)SpecifiedatElevatedTemperatures ?HighAvalancheEnergySpecified TypicalApplications ?PowerSupplies ?InductiveLoads ?