STF20N65M5

Marking：20N65M5；Package：TO-220FP；N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages

Features ?ExtremelylowRDS(on) ?Lowgatechargeandinputcapacitance ?Excellentswitchingperformance ?100avalanchetested Applications ?Switchingapplications Description ThesedevicesareN-channelPowerMOSFET basedontheMDmesh?M5innovativevertical processtechnology

STF20NM65N

Marking：20NM65N；Package：TO-220FP；N-channel 650 V, 0.250 廓, 15 A TO-220, TO-220FP second generation MDmesh??Power MOSFET

Features ■100avalanchetested ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance Application ■Switchingapplications Description ThesedevicesareN-channelPowerMOSFETs realizedusingthesecondgenerationMDmesh? technology.ThisrevolutionaryPowerMOSFET ass

STFI20N65M5

Marking：20N65M5；Package：I2PAKFP；N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages

Features ?ExtremelylowRDS(on) ?Lowgatechargeandinputcapacitance ?Excellentswitchingperformance ?100avalanchetested Applications ?Switchingapplications Description ThesedevicesareN-channelPowerMOSFET basedontheMDmesh?M5innovativevertical processtechnology

STFW20N65M5

Marking：20N65M5；Package：TO-3FP；N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages

Features ?ExtremelylowRDS(on) ?Lowgatechargeandinputcapacitance ?Excellentswitchingperformance ?100avalanchetested Applications ?Switchingapplications Description ThesedevicesareN-channelPowerMOSFET basedontheMDmesh?M5innovativevertical processtechnology

STI20N60M2-EP

Marking：20N60M2EP；Package：I2PAK；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh? M2 EP Power MOSFET in an I2PAK package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?Verylowturn-offswitchinglosses ?100avalanchetested ?Zener-protected Applications ?Switchingapplications ?Tailoredforveryhighfrequencyconverters(f>150kHz) Description Thisdevicei

STL20NF20

Marking：20NF20；Package：PowerFLAT；N-channel 200 V, 0.10 Ω, 15 A PowerFLAT? (5x6) low gate charge STripFET? Power MOSFET

Features ■Exceptionaldv/dtcapability ■Lowgatecharge ■100avalanchetested Application ■Switchingapplications Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFET?process hasspecificallybeendesignedtominimizeinput capacitanceandgatec

STP20NM65N

Marking：20NM65N；Package：TO-220；N-channel 650 V, 0.250 廓, 15 A TO-220, TO-220FP second generation MDmesh??Power MOSFET

Features ■100avalanchetested ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance Application ■Switchingapplications Description ThesedevicesareN-channelPowerMOSFETs realizedusingthesecondgenerationMDmesh? technology.ThisrevolutionaryPowerMOSFET ass

STW20N60M2-EP

Marking：20N60M2EP；Package：TO-247；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh? M2 EP Power MOSFET in a TO-247 package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?Verylowturn-offswitchinglosses ?100avalanchetested ?Zener-protected Applications ?Switchingapplications ?Tailoredforveryhighfrequencyconverters(f>150kHz) Description Thisdevicei

TF20N02

Marking：20N02；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

●GeneralDescription TheTF20N02combinesadvancedtrench MOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tominimize

TF20N03

Marking：20N03TFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description TheTF20N03TO-252usesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. GeneralFeatures ●HighdensitycelldesignforultralowRdson ●Fullycharacterizedavalanchevoltageandcurrent