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BC856BSH

Marking：2E；Package：TSSOP6；65 V, 100 mA PNP/PNP general-purpose double transistor

Featuresandbenefits ?Lowcollectorcapacitance ?Lowcollector-emittersaturationvoltage ?Closelymatchedcurrentgain ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors ?High-temperatureapplicationsupto175°C

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BC856BSH-Q

Marking：2E；Package：TSSOP6；65 V, 100 mA PNP/PNP general-purpose double transistor

Featuresandbenefits ?Lowcollectorcapacitance ?Lowcollector-emittersaturationvoltage ?Closelymatchedcurrentgain ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors ?High-temperatureapplicationsupto175°C ?QualifiedaccordingtoA

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BZX58550-C6V8

Marking：2E；Package：SOD523；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤300mW ?Toleranceseries:approximately±5 ?Workingvoltagerange:nominal1.8

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BZX58550-C6V8-Q

Marking：2E；Package：SOD523；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanSOD523(SC-79)ultrasmallandflatleadSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤300mW ?Toleranceseries:approximately±5 ?Workingvoltagerange:nominal1.8

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BZX884S-B3V6

Marking：2E；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BZX884S-B3V6-Q

Marking：2E；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

KST93

Marking：2E；Package：SOT-23；High Voltage Transistor

HighVoltageTransistor

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MM3Z13

Marking：2E；Silicon Planar Zener Diodes

FEATURES ?Totalpowerdissipation:Max.200mW. ?Widezenerreversevoltagerange2.0Vto75V. ?Smallplasticpackagesuitableforsurfacemounteddesign. ?Toleranceapproximately±5

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風微電子廣東佑風微電子有限公司

NJM8020F3

Marking：2E；Package：SC-88A；LOW POWER SINGLE CHANNEL OP-AMPS

■FEATURES(V+=5V,V-=0V,Ta=25°C) ●GuaranteedTemperature-40℃to125℃ ●InputOffsetVoltage2mVmax. ●InputOffsetVoltageDrift17μV/℃max. ●SupplyCurrent0.7mAmax. ●OperatingVoltage3Vto36Vor±1.5Vto±18V ●IntegratedEMIfilterEMIRR=84dBtyp.@f=1.8GHz ●GBW1.1MHztyp. ●GNDsens

NJRCNew Japan Radio

新日本無線株式會社

PBSS5130PAP

Marking：2E；Package：DFN2020-6；30 V, 1 A PNP/PNP low VCEsat (BISS) transistor

1.Generaldescription PNP/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4130PANP.NPN/NPNcomplement:PBSS4130PAN. 2.Featuresandbenefits ?Verylowcollec

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

詳細參數(shù)

  • 型號：

    2E

  • 制造商：

    NORRIS

供應商型號品牌批號封裝庫存備注價格
ON/安森美
23+
SOT23
15000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
14+
SOT-23
5600
普通
 詢價
XX
23+
SOT-236
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
XX
23+
NA/
6000
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
MPS/美國芯源
22+
QFN
25000
只做原裝,原裝,假一罰十
 詢價
YXYBDT/一芯源
20+21+
SOT-23
60000
原.現(xiàn)貨
 詢價
2022+
93
全新原裝 貨期兩周
 詢價
UNIOHM/厚聲
24+
0402
175
大批量供應優(yōu)勢庫存熱賣
 詢價
0805
63200
詢價
YAGEO
2022+
7600
原廠原裝,假一罰十
 詢價
更多2E供應商 更新時間2025-3-25 14:10:00

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