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2SB1182

Mediumpowertransistor(-32V,-2A)

●Features 1)LowVCE(sat). VCE(sat)=-0.5V(Typ.) (IC/IB=-2A/-0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M. ●Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

MediumpowerTransistor(32V,2A)

Features 1)LowVCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A) 2)Complementsthe2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/SD1227M.

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

TO-252-2L(4R)Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES PowerDissipation

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

2SB1182

Mediumpowertransistor(32V,2A)

Mediumpowertransistor(?32V,?2A) Features 1)LowVCE(sat). VCE(sat)=?0.5V(Typ.) (IC/IB=?2A/?0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862 Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

Mediumpowertransistor(32V,2A)

Features 1)LowVCE(sat). VCE(sat)=?0.5V(Typ.) (IC/IB=?2A/?0.2A) 2)Complements2SD1758/2SD1862.

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

MEDIUMPOWERLOWVOLTAGETRANSISTOR

DESCRIPTION TheUTC2SB1182isamediumpowerlowvoltagetransistor,designedforaudiopoweramplifier,DC-DCconverterandvoltageregulator. FEATURES *Highcurrentoutputupto3A *Lowsaturationvoltage

UTCUnisonic Technologies

友順友順科技股份有限公司

2SB1182

MediumPowerTransistor

FEATURES ●LowVCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) ●Complementsthe2SD1758 APPLICATIONS ●Epitaxialplanartype. ●PNPsilicontransistor.

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

2SB1182

Mediumpowertransistor(32V,2A)

Mediumpowertransistor(?32V,?2A) Features 1)LowVCE(sat). VCE(sat)=?0.5V(Typ.) (IC/IB=?2A/?0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862 Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

2SB1182

iscSiliconPNPPowerTransistor

DESCRIPTION ?Smallandslimpackage ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Powerdissipation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SB1182

Mediumpowertransistor(-32V,-2A)

●Features 1)LowVCE(sat). VCE(sat)=?0.5V(Typ.) (IC/IB=?2A/?0.2A) 2)Complementsthe2SD1766/2SD1758/2SD1862. ●Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

供應(yīng)商型號品牌批號封裝庫存備注價格
ROHM
2020+
TO-252
2045
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
ROHM
21+
TO-252
1271
原裝現(xiàn)貨假一賠十
 詢價
ROHM/羅姆
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ROHM/羅姆
2022
TO-252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
ROHM/羅姆
23+
NA/
5036
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
ROHM
23+
TO-252
1271
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ROHM
24+
TO-252
6270
新進(jìn)庫存/原裝
 詢價
ROHM
23+
TO-252
9526
詢價
ROHM
2016+
SOT-252
6523
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
 詢價
ROHM
23+
TO-252
6000
專業(yè)優(yōu)勢供應(yīng)
 詢價
更多2SB1182TLQR供應(yīng)商 更新時間2025-2-2 13:57:00

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