首頁 >2SD2114-V>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

2SD2114

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ?HighDCcurrentgain. ?Highemitter-basevoltage. ?LowVCE(sat).

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

2SD2114

TRANSISTOR(NPN)

FEATURES ?HighDCcurrentgain. ?Highemitter-basevoltage. ?LowVCE(sat).

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽半導(dǎo)體深圳市金譽半導(dǎo)體股份有限公司

2SD2114

NPNPlastic-EncapsulateTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SD2114

NPNPlasticEncapsulatedTransistor

FEATURE ?HighDCCurrentGain. ?HighEmitter-BaseVoltage.VEBO=12V(Min.)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SD2114K

PowerTransistor

Features HighDCcurrentgain. Highemitter-basevoltage. LowVCE(sat).

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SD2114K

High-currentGainMediumPowerTransistor(20V,0.5A)

ROHMRohm

羅姆羅姆半導(dǎo)體集團

2SD2114K

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain.hFE=1200(Typ.) 2)Highemitter-basevoltage.VEBO=12V(Min.) 3)LowVCE(sat).VCE(sat)=0.18V(Typ.)(IC/IB=500mA/20mA)

ROHMRohm

羅姆羅姆半導(dǎo)體集團

2SD2114K

High-currentGainMediumPowerTransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團

2SD2114K

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain.hFE=1200(Typ.) 2)Highemitter-basevoltage.VEBO=12V(Min.) 3)LowVCE(sat).VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) Structure Epitaxialplanartype NPNsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團

2SD2114K

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

ROHMRohm

羅姆羅姆半導(dǎo)體集團

2SD2114KS

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain.hFE=1200(Typ.) 2)Highemitter-basevoltage.VEBO=12V(Min.) 3)LowVCE(sat).VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA) Structure Epitaxialplanartype NPNsilicontransistor

ROHMRohm

羅姆羅姆半導(dǎo)體集團

2SD2114KU

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

ROHMRohm

羅姆羅姆半導(dǎo)體集團

2SD2114KV

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

ROHMRohm

羅姆羅姆半導(dǎo)體集團

2SD2114KW

High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

ROHMRohm

羅姆羅姆半導(dǎo)體集團

供應(yīng)商型號品牌批號封裝庫存備注價格
ROHM
23+
SOT23
11092
詢價
ROHM
24+
SOT-23
9200
新進庫存/原裝
 詢價
德微
21+
SOT23
1539
原裝現(xiàn)貨假一賠十
 詢價
德微
22+
SOT23
32350
原裝正品 假一罰十 公司現(xiàn)貨
 詢價
德微
2122+
SOT23
25500
全新原裝正品現(xiàn)貨,假一賠十
 詢價
德微
22+
SOT23
25000
原裝現(xiàn)貨,價格優(yōu)惠,假一罰十
 詢價
德微
1318+
SOT23
1539
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
德微
21+
SOT23
9866
詢價
德微
22+
SOT23
30000
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！
 詢價
德微
2023+
SOT23
1539
原廠全新正品旗艦店優(yōu)勢現(xiàn)貨
 詢價
更多2SD2114-V供應(yīng)商 更新時間2024-11-7 9:52:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多