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2SK3510-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance:RDS(on)=8.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3510-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNELPOWERMOSFET DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=8.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingatepro

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3510-Z

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3510-ZJ

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance:RDS(on)=8.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3510-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNELPOWERMOSFET DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=8.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingatepro

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3510-ZJ

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3510

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2SK3510

MOSFieldEffectTransistor

Features ●Superlowon-stateresistance:RDS(on)=8.5mMAX.(VGS=10V,ID=42A) ●LowCiss:Ciss=8500pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SK3510

MOSFIELDEFFECTTRANSISTOR

SWITCHING CHANNELPOWERMOSFET DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=8.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingatepro

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3510

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance:RDS(on)=8.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
FUJI/富士電機
23+
TO-263
69820
終端可以免費供樣,支持BOM配單!
 詢價
NEC
24+
6540
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
R
23+
TO-220
10000
公司只做原裝正品
 詢價
R
22+
TO-220
6000
十年配單,只做原裝
 詢價
R
22+
TO-220
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
R
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
NEC
24+
TO-263
8866
詢價
NEC
23+
TO-263
7600
全新原裝現(xiàn)貨
 詢價
NEC
23+
TO-263
932322
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
 詢價
更多2SK3510-Z供應(yīng)商 更新時間2025-2-24 14:02:00

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