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2SK3510-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING CHANNELPOWERMOSFET DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=8.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingatepro

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3510-ZJ

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance:RDS(on)=8.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3510-ZJ

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3510

MOSFIELDEFFECTTRANSISTOR

SWITCHING CHANNELPOWERMOSFET DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=8.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingatepro

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3510

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance:RDS(on)=8.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3510

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3510

MOSFieldEffectTransistor

Features ●Superlowon-stateresistance:RDS(on)=8.5mMAX.(VGS=10V,ID=42A) ●LowCiss:Ciss=8500pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SK3510-S

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance:RDS(on)=8.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3510-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING CHANNELPOWERMOSFET DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=8.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingatepro

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3510-S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3510-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING CHANNELPOWERMOSFET DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)=8.5mΩMAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingatepro

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3510-Z

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

2SK3510-Z

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION The2SK3510isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance:RDS(on)=8.5m?MAX.(VGS=10V,ID=42A) ?LowCiss:Ciss=8500pFTYP. ?Built-ingateprotectiondiode

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

供應商型號品牌批號封裝庫存備注價格
NEC
24+
TO-263
8866
詢價
NEC
23+
TO-263
7600
全新原裝現(xiàn)貨
 詢價
NEC
22+
TO-263
6000
十年配單,只做原裝
 詢價
NEC
23+
TO-263
932322
原廠授權代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
NEC
22+
TO-263
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
NEC
24+
TO-263
12300
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
VBSEMI/臺灣微碧
23+
T0-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
VBSEMI/臺灣微碧
23+
T0-220
20000
原裝正品 歡迎咨詢
 詢價
NEC
2339+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
KEXIN
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
更多2SK3510-ZJ供應商 更新時間2025-1-8 16:30:00

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