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744760136A

Marking：36N；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

744760136GA

Marking：36N；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

RSM36N120T7

Marking：36N120；Package：TO-247-3；N-Channel SiC Power MOSFET

Features ?HighBlockingVoltagewithLowOn-Resistance ?HighSpeedSwitchingwithLowCapacitance ?EasytoconnectinparallelandtoDrive Benefits ?HigherSystemEfficiency ?ReducedCoolingRequirements ?IncreasedPowerDensity ?IncreasedSystemSwitchingFrequency

RECTRON

Rectron Semiconductor

STB36N60M6

Marking：36N60M6；Package：D2PAK；N-channel 600 V, 85 mΩ typ., 30 A MDmesh? M6 Power MOSFET in a D2PAK package

Features ?Reducedswitchinglosses ?LowerRDS(on)xareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description ThenewMDmesh?M6technologyincorporates themostrecentadvancementstothewell

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB36NM60N

Marking：36NM60N；Package：D2PAK；Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh? II Power MOSFET in a D2PAK package

Features ?Designedforautomotiveapplicationsand AEC-Q101qualified ?100avalanchetested ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgene

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB36NM60ND

Marking：36NM60ND；Package：D2PAK；Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II

Description TheseFDmesh?IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh? technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STH36N60DM6-7AG

Marking：36N60DM6；Package：H2PAK-7；Automotive-grade N-channel 600 V, 0.084 Ω typ., 29 A MDmesh? DM6 Power MOSFET in an H2PAK-7 package

Applications ?Switchingapplications Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmesh?DM6fastrecovery diodeseries.ComparedwiththepreviousMDmeshfastgeneration,DM6 combinesverylowrecoverycharge(Qrr),recoverytime(trr)andexcellent improvementin

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW36NM60N

Marking：36NM60N；Package：TO-247；N-channel 600 V, 0.092 Ω, 29 A, MDmesh? II Power MOSFET in TO-247

Features ■100avalanchetested ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance Application ■Switchingapplications –Automotive Description Thisdeviceismadeusingthesecondgeneration ofMDmesh?technology.Thisrevolutionary PowerMOSFETassociatesanewve

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STW36NM60ND

Marking：36NM60ND；Package：TO-247；Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II

Description TheseFDmesh?IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh? technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

ISC036N04NM5

Marking：36N04NM5；Package：TDSON-8FL；OptiMOSTM 5 Power-Transistor, 40 V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    36N

  • 制造商：

    LIGHTING COMP DESIGN

  • 制造商：

    Lighting Components & Design Inc

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
12+
TO-263
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
ST
23+
TO263
50
原裝房間現(xiàn)貨假一賠十
 詢價(jià)
INFINEON/英飛凌
23+
TO-263
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
ST/意法
22+
QFN
20000
保證原裝正品,假一陪十
 詢價(jià)
ST/意法
21+
QFN
6
原裝現(xiàn)貨假一賠十
 詢價(jià)
VISUAL
20+
光電元件
982
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
ST/意法
21+
QFN
1062
只做原裝正品,不止網(wǎng)上數(shù)量,歡迎電話微信查詢!
 詢價(jià)
NEC
22+
TO-252
6000
十年配單,只做原裝
 詢價(jià)
ST/意法
23+
TO-247
7000
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋?kù)存,詳
 詢價(jià)
ST
21+
QFN
9866
詢價(jià)
更多36N供應(yīng)商 更新時(shí)間2025-3-13 11:04:00

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