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AOI425

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=-55A@TC=25℃ ·DrainSourceVoltage :VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

AOI425

P-Channel 40 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

ASL425

200-4000MHzMMICAmplifier

ASB

Advanced Semiconductor Business Inc.

ASL425

200~4000MHzMMICAmplifier

ASB

Advanced Semiconductor Business Inc.

AVHF425

IlluminatedPushbutton-22,25,28&30mm

CIT

CIT Relay & Switch

AVHT425

IlluminatedPushbutton-22,25,28&30mm

CIT

CIT Relay & Switch

BE425M

APCBack-UPS,6Outlets,425VA,120V

SCHNEIDERSchneider Electric

施耐德施耐德電氣

BFG425W

NPN25GHzwidebandtransistor

DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES ?Veryhighpowergain ?Lownoisefigure ?Hightransitionfrequency ?Emitteristhermallead ?Lowfeedbackcapacitance. APPLI

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG425W

Microwave,lownoise,SiGeNPNHBT

Microwave,lownoise,SiGeNPNHBT UHF25GHZ,lownoisetransistorwithSiGeHBTtechnique,highpowergain,lownoiseandlargedynamicrange.TheadoptionofsubminiatureSOT-343Rpackage,especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFbroadbandhigh

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

BFG425W

NPNTransistors

■Features ●Veryhighpowergain ●Lownoisefigure ●25GHzwidebandtransistor ●Emitteristhermallead ●Lowfeedbackcapacitance.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

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A
23+
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10000
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TO-251A
68900
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6000
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25000
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19+
63390
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TO-251
16689
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5623
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AOS/萬代
23+
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24190
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20000
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更多AOI425供應(yīng)商 更新時間2025-1-24 14:30:00