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AOB11S60	文件：297.89 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=11A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.399Ω(Max) ?100avalanchetested ?MinimumLot-to	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
AOB11S60	文件：1.03889 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
AOB11S60	文件：297.68 Kbytes Page：6 Pages	600V11AaMOSPowerTransistor GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AOB11S60L	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AOB11S60L	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AOB11S60L	文件：1.03889 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
AOD11S60	文件：400.26 Kbytes Page：7 Pages	600V11AaMOSPowerTransistor GeneralDescription TheAOD11S60&AOI11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityth	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AOD11S60	文件：308.56 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
AOI11S60	文件：400.26 Kbytes Page：7 Pages	600V11AaMOSPowerTransistor GeneralDescription TheAOD11S60&AOI11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityth	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AOI11S60	文件：316.76 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
AOT11S60	文件：297.68 Kbytes Page：6 Pages	600V11AaMOSPowerTransistor GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AOT11S60	文件：1.033099 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
AOT11S60L	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AOT11S60L	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AOT11S60L	文件：304.4 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
AOTF11S60	文件：297.75 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
AOTF11S60	文件：297.68 Kbytes Page：6 Pages	600V11AaMOSPowerTransistor GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AOTF11S60	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AOTF11S60	文件：508.66 Kbytes Page：7 Pages	600V11AaMOS GeneralDescription TheAOT11S60&AOB11S60&AOTF11S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanche	AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體	AOSMD
AOTF11S60	文件：1.70843 Mbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司	DOINGTER

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市凌旭科技有限公司	AP11S60GI	APEC/富鼎	21+	原廠封裝	51410		詢價(jià)
深圳市科恒偉業(yè)電子有限公司	AP11S60GI	APEC/富鼎	2052+		9852	只做原裝正品現(xiàn)貨!或訂貨假一賠十!	詢價(jià)
深圳市艾宇特電子科技有限公司	AP11S60GI	APEC/富鼎	24+		9800	只做原裝正品現(xiàn)貨或訂貨假一賠十!	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	AP11S60I	APEC	23+		7300	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	AP11S60I	APEC	23+		7300	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市航潤創(chuàng)能電子集團(tuán)有限公司	AP11S60I-A-HF	APEC	21+	TO-220F	100	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市智創(chuàng)誠芯電子科技有限公司	AP11S60I-A-HF	APEC	22+	TO-220F	25000	原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十	詢價(jià)
深圳市威雅利發(fā)展有限公司	AP11S60I-A-HF	APEC	1312+	TO-220F	100	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)
深圳市宏興瑞科技有限公司	AP11S60I-A-HF	APEC	23+	TO-220F	10000	原裝正品現(xiàn)貨	詢價(jià)
深圳市粵駿騰電子科技有限公司	AP11S60I-HF	APEC/富鼎	24+	TO-220	28522	原裝現(xiàn)貨	詢價(jià)

更多AP11S60GI供應(yīng)商更新時(shí)間2025-1-18 14:20:00

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