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AQV410EHAX

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQV410EHAZ

PhotoMOSRELAYS

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQW410EHA

PhotoMOSRelayDimensions

etc2List of Unclassifed Manufacturers

etc未分類(lèi)制造商etc2未分類(lèi)制造商

AQY410EH

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQY410EH

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY410EHA

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQY410EHA

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY410EHAX

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQY410EHAX

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY410EHAZ

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQY410EHAZ

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY410SX

GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AQY410SZ

GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType

NAISNais(Matsushita Electric Works)

松下電器松下電器機(jī)電(中國(guó))有限公司

AT-410

FixedAttenuators(N,BNC,TNC)

HIROSEHirose Electric Company

廣瀨日本廣瀨電機(jī)株式會(huì)社

AT-410(40)

50ohmswidevarietiesstandardconnectors

HIROSEHirose Electric Company

廣瀨日本廣瀨電機(jī)株式會(huì)社

ATN410

Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments

ETC1List of Unclassifed Manufacturers

etc未分類(lèi)制造商未分類(lèi)制造商

BCL-410

CompressionStyleRingTongueTerminal

MOLEX4Molex Electronics Ltd.

莫仕

BCL-410-PL

CompressionStyleRingTongueTerminalfor4AWGWire,StudSize10,Plated

MOLEX4Molex Electronics Ltd.

莫仕

BCL-410-PL

CompressionStyleRingTongueTerminal

MOLEX4Molex Electronics Ltd.

莫仕

BCR410

ActiveBiasController

ActiveBiasController Characteristics ●Suppliesstablebiascurrentfrom1.8Voperatingvoltageon ●Lowvoltagedrop:110mVfor10mAcollectorcurrrent Applicationnotes ●StabilizingbiascurrentofNPNtransistorsandFETsfrom100μAto20mA ●IdealsupplementforSiegetandothertrans

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    AQV410EHAJ

  • 制造商:

    Panasonic Electric Works

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
松下panasonic
24+
全新原裝
6180
詢(xún)價(jià)
NAIS
06+
SOP6
2000
詢(xún)價(jià)
PANASONIC
22+
原廠原封
8200
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!!
詢(xún)價(jià)
Panason
23+
SOP6
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
詢(xún)價(jià)
panasoni
專(zhuān)業(yè)光耦
DIPSOP6
65800
光耦原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
詢(xún)價(jià)
NAIS松下
24+
SMDDIP
12500
原裝正品現(xiàn)貨
詢(xún)價(jià)
PANASONIC(松下)
2032+
SMD-6
2579
向鴻優(yōu)勢(shì)庫(kù)存,貨在倉(cāng)庫(kù)要貨請(qǐng)確認(rèn)
詢(xún)價(jià)
NAIS
2021+
DIP
100500
一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
詢(xún)價(jià)
Panasoni
21+
SOP6
1344
原裝現(xiàn)貨假一賠十
詢(xún)價(jià)
PANASONIC
20+
6-SMD
8796
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更多AQV410EHAJ供應(yīng)商 更新時(shí)間2025-1-10 16:30:00