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首頁(yè) >AQV414AXJ>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
AQV414AZ	文件：76.22 Kbytes Page：3 Pages	Normallyclosed6-pintypeof400VloadvoltageMeasuringinstruments FEATURES 1.Lowon-resistance(typ.26?)fornormally-closedtype Thishasbeenachievedthankstothebuilt-inMOSFETprocessedbyourproprietarymethod,DSD(DoublediffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSfeatureextremelylowclosedcircuit	PanasonicPanasonic Corporation 松下松下電器	Panasonic
AQV414E	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EA	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EAX	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EAZ	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EH	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EHA	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EHAX	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414EHAZ	文件：54.95 Kbytes Page：3 Pages	PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS
AQV414S	文件：157.89 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分類制造商	ETC
AQW414	文件：39.54 Kbytes Page：2 Pages	GU(GeneralUse)Type[2-Channel(FormB)Type]	ETCList of Unclassifed Manufacturers 未分類制造商	ETC
AQW414	文件：169.72 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
AQW414A	文件：169.72 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
AQW414EH	文件：75.52 Kbytes Page：3 Pages	Generaluseandeconomytype.DIP(2FormB)8-pintype.Reinforcedinsulation5,000Vtype. FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.Con-formstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W).252×(L).388×(H).126inch,	PanasonicPanasonic Corporation 松下松下電器	Panasonic
AQW414EHA	文件：75.52 Kbytes Page：3 Pages	Generaluseandeconomytype.DIP(2FormB)8-pintype.Reinforcedinsulation5,000Vtype. FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.Con-formstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W).252×(L).388×(H).126inch,	PanasonicPanasonic Corporation 松下松下電器	Panasonic
AQW414EHAX	文件：75.52 Kbytes Page：3 Pages	Generaluseandeconomytype.DIP(2FormB)8-pintype.Reinforcedinsulation5,000Vtype. FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.Con-formstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W).252×(L).388×(H).126inch,	PanasonicPanasonic Corporation 松下松下電器	Panasonic
AQW414EHAZ	文件：75.52 Kbytes Page：3 Pages	Generaluseandeconomytype.DIP(2FormB)8-pintype.Reinforcedinsulation5,000Vtype. FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.Con-formstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W).252×(L).388×(H).126inch,	PanasonicPanasonic Corporation 松下松下電器	Panasonic
AQW414S	文件：158.29 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY	ETCList of Unclassifed Manufacturers 未分類制造商	ETC
AQY414	文件：151.02 Kbytes Page：2 Pages	HIGHVOLTAGE,PHOTOMOSRELAY [CLOBALcomponents&controls] DESCRIPTION TheAQY414Sisasinglepolesinglethrow(SPST),normallyclose(NC),MosRelay.therelaycancontrolAcorDCloadscurrentsupto130mA,withasupplyvoltageupto400V.Thedeviceispackagedina4pinSopackage.Thispackageoffersanins	ETCList of Unclassifed Manufacturers 未分類制造商	ETC
AQY414EH	文件：49.7 Kbytes Page：3 Pages	GU(GeneralUse)-EType1-Channel(FormB)4-pinType FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty	NAISNais(Matsushita Electric Works) 松下電器松下電器機(jī)電(中國(guó))有限公司	NAIS

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型號(hào)：
AQV414AXJ
制造商：
Panasonic Electric Works

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市一線半導(dǎo)體有限公司	AQV414AZ	Panisonic松下	24+		5000		詢價(jià)
深圳市錦達(dá)世紀(jì)科技有限公司	AQV414AZ	NAIS	06+	SOP6	2000		詢價(jià)
深圳市科恒偉業(yè)電子有限公司	AQV414AZ	NAIS	2016+	SOP6	5562	只做進(jìn)口原裝現(xiàn)貨!或訂貨!假一賠十!	詢價(jià)
深圳市壹芯創(chuàng)科技有限公司	AQV414AZ	PANASONIC	22+	原廠原封	8200	原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!!	詢價(jià)
深圳市華來(lái)深電子有限公司	AQV414AZ	PANASON	23+	SOP-6P	8650	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
深圳市華斯頓科技有限公司	AQV414AZ	NAIS	22+23+	SOP6	13791	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)
深圳市納艾斯科技有限公司	AQV414AZ	PANASON	2020+	SOP6	80000	只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增	詢價(jià)
深圳市維爾達(dá)電子有限公司	AQV414AZ	NAIS	2023+	SOP6	80000	一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品	詢價(jià)
瀚佳科技(深圳)有限公司	AQV414AZ	NAIS	20+	SOP6	65300	一級(jí)代理/放心購(gòu)買!	詢價(jià)
深圳市拓億芯電子有限公司	AQV414AZ	NAIS	23+	SOP-6	30000	代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)	詢價(jià)

更多AQV414AXJ供應(yīng)商更新時(shí)間2024-10-24 16:30:00

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