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B31N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.082ohm,Id=31A)

Applications HighfrequencyDC-DCconverters Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IIRFB31N20D

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFB31N20

PowerMOSFET(Vdss=200V,Rds(on)max=0.082ohm,Id=31A)

Applications HighfrequencyDC-DCconverters Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFB31N20D

SEMICONDUCTORS

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IRFB31N20D

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFB31N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.082ohm,Id=31A)

Applications HighfrequencyDC-DCconverters Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFB31N20DPBF

HEXFETPowerMOSFET(VDSS=200V,RDS(on)max=0.082廓,ID=31A)

Applications HighFrequencyDC-DCconverters Lead-Free  Benefits LowGatetoDraintoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFB31N20DPBF

HighFrequencyDC-DCconverters

IRF

International Rectifier

IRFB31N20DPBF

HighFrequencyDC-DCconverters

IRF

International Rectifier

IRFS31N20D

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFS31N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.082ohm,Id=31A)

Applications HighfrequencyDC-DCconverters Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFS31N20DPBF

HEXFETPowerMOSFET(VDSS=200V,RDS(on)max=0.082廓,ID=31A)

Applications HighFrequencyDC-DCconverters Lead-Free  Benefits LowGatetoDraintoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFS31N20DPBF

HighFrequencyDC-DCconverters

IRF

International Rectifier

IRFS31N20DTRLP

HighFrequencyDC-DCconverters

IRF

International Rectifier

IRFSL31N20D

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFSL31N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.082ohm,Id=31A)

Applications HighfrequencyDC-DCconverters Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFSL31N20DPBF

HighFrequencyDC-DCconverters

IRF

International Rectifier

IRFSL31N20DPBF

HEXFETPowerMOSFET(VDSS=200V,RDS(on)max=0.082廓,ID=31A)

Applications HighFrequencyDC-DCconverters Lead-Free  Benefits LowGatetoDraintoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign, FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

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IR
2022+
SOT263
14680
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IR
23+
SOT263
6000
原裝正品,支持實(shí)單
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IR
22+
SOT263
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
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IR
22+
SOT263
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
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IR
23+
SOT263
8000
只做原裝現(xiàn)貨
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IR
23+
SOT263
7000
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IR
24+
TO-263
5000
只做原裝公司現(xiàn)貨
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Infineon
18+
NA
3657
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
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IR
23+
TO-263
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
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INFINE0N
21+
D2PAK
32568
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
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更多AUIRFS31N20DTRPBF供應(yīng)商 更新時(shí)間2025-1-13 14:01:00