| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
SCHOTTKYBARRIERDIODE SCHOTTKYBARRIERDIODE FEATURES ●HighSwitchingSpeed ●LowForwardVoltage ●GuardRingProtected APPLICATIONS ●VoltageClamping ●ProtectionCircuits | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司 | JIANGSU | ||
350mWSchottkyDiodes40Volts Features ?HalogenFreeAvailableUponRequestByAddingSuffix-HF ?VeryLowForwardVoltageDrop. ?GuardRingProtected ?UntralSmallSurfaceMountPackage ?EpoxyMeetsUL94V-0FlammabilityRating ?MoistureSensitivityLevel1 ?LeadFreeFinish/RoHSCompliant(PSuffixDesignates | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
iscSiliconPNPPowerTransistor DESCRIPTION ·DCCurrentGain-:hFE=40@IC=-0.5A ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=-60V(Min) ·ComplementtotypeBD719 APPLICATIONS ·Designedforuseinaudiooutputandgeneralpurposeamplifierapplications. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
SiliconPNPPowerTransistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
SurfacemountSi-EpitaxialPlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors ?Powerdissipation–1.5W ?PlasticcaseSOT-223 ?Weightapprox.–0.04g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedandreeled | Diotec Diotec Semiconductor | Diotec | ||
NPNSiliconHigh-VoltageTransistors(SuitableforvideooutputstagesinTVsetsandswitchingpowersuppliesHighbreakdownvoltage) ●SuitableforvideooutputstagesinTVsetsandswitchingpowersupplies ●Highbreakdownvoltage ●Lowcollector-emittersaturationvoltage ●Lowcapacitance ●Complementarytypes:BF721/723(PNP) | SIEMENSSiemens Ltd 西門(mén)子德國(guó)西門(mén)子股份公司 | SIEMENS | ||
NPNSILICONPLANARHIGHVOLTAGETRANSISTOR FEATURES *Highbreakdownandlowsaturationvoltages APPLICATIONS *SuitableforvideooutputstagesinTVsets *Switchingpowersupplies | Zetex Zetex Semiconductors | Zetex | ||
NPNhigh-voltagetransistors DESCRIPTION NPNtransistorsinaSOT223plasticpackage. PNPcomplement:BF723. FEATURES ?Lowfeedbackcapacitance. APPLICATIONS ?Class-Bvideooutputstagesofcolourtelevisionreceivers ?Generalpurposehighvoltagecircuits. | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPNhigh-voltagetransistors DESCRIPTION NPNtransistorsinaSOT223plasticpackage. PNPcomplement:BF723. FEATURES ?Lowfeedbackcapacitance. APPLICATIONS ?Class-Bvideooutputstagesofcolourtelevisionreceivers ?Generalpurposehighvoltagecircuits. | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPNhigh-voltagetransistors FEATURES ?Lowfeedbackcapacitance. APPLICATIONS ?Class-Bvideooutputstagesofcolourtelevision receivers ?Generalpurposehighvoltagecircuits. DESCRIPTION NPNtransistorsinaSOT223plasticpackage. PNPcomplement:BF723. | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
CHeterojunctionWidebandRFBipolarTransistor ProductBrief TheBFP720isaverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=25mA.Thed | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconGermaniumBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
RobustHighPerformanceLowNoiseBipolarRFTransistor ProductBrief TheBFP720ESDisaSiliconGermaniumCarbon(SiGe:C)NPNHeterojunctionwidebandBipolarRFTransistor(HBT)inaplasticdualemitterstandardpackagewithvisibleleads.Thedeviceisfittedwithinternalprotectioncircuits,whichenhancerobustnessagainstESDandhighRFinput | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CHeterojunctionWidebandRFBipolarTransistor ProductBrief TheBFP720FisaverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4.0VandcurrentsuptoIC=25mA.Th | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconGermaniumBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
RobustHighPerformanceLowNoiseBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
RobustLowNoiseSiliconGermaniumBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ULTRA-FASTRECOVERYApproximately25AMPERESSINGLE-PHASE,FULL-WAVEBRIDGES | edi Electronic devices inc. | edi | ||
Veryfasthigh-voltagesoft-recoveryrectifiers DESCRIPTION Ruggedglasspackage,usingahightemperaturealloyedconstruction. Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched. Thepackageisdesignedtobeusedinaninsulatingmediumsuchasresin,oilorSF6gas. FEATU | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
Veryfasthigh-voltagesoft-recoveryrectifiers | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MCC(美微科) |
2023+ |
SOT-23 |
8700 |
原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
INF |
19+ |
13832 |
詢(xún)價(jià) | ||||
PHIL |
23+ |
24876 |
詢(xún)價(jià) | ||||
PHIL |
23+ |
原廠(chǎng)封裝 |
5177 |
現(xiàn)貨 |
詢(xún)價(jià) | ||
CJ/長(zhǎng)電 |
23+ |
SOT-323 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢(xún)價(jià) | ||
CJ/長(zhǎng)電 |
2022 |
SOT-323 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún) |
詢(xún)價(jià) | ||
CJ/長(zhǎng)電 |
23+ |
NA/ |
4610 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票 |
詢(xún)價(jià) | ||
CJ/長(zhǎng)晶 |
24+ |
SOT-323 |
100000 |
長(zhǎng)晶全系列二三極管原裝優(yōu)勢(shì)供應(yīng),歡迎詢(xún)價(jià) |
詢(xún)價(jià) | ||
長(zhǎng)電/長(zhǎng)晶 |
23+ |
SOT-323 |
55000 |
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
MCC |
23+ |
SOT-323 |
73434 |
原裝正品現(xiàn)貨 |
詢(xún)價(jià) |
