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BCR135F

NPN Silicon Digital Transistor

NPNSiliconDigitalTransistor ?Switchingcircuit,inverter,interfacecircuitdrivercircuit ?Builtinbiasresistor(R1=10k?,R2=47k?) ?For6-PINpackages:two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BCR135F

NPN Silicon Digital Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BCR135S

NPNSiliconDigitalTransistorArray(Switchingcircuit,inverter,interfacecircuit,drivercircuit)

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BCR135S

NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor ?Switchingcircuit,inverter,interfacecircuitdrivercircuit ?Builtinbiasresistor(R1=10k?,R2=47k?) ?For6-PINpackages:two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BCR135S

NPNSiliconDigitalTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BCR135T

NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor ?Switchingcircuit,inverter,interfacecircuitdrivercircuit ?Builtinbiasresistor(R1=10k?,R2=47k?) ?For6-PINpackages:two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BCR135W

NPNSiliconDigitalTransistor

NPNSiliconDigitalTransistor ?Switchingcircuit,inverter,interfacecircuitdrivercircuit ?Builtinbiasresistor(R1=10k?,R2=47k?) ?For6-PINpackages:two(galvanic)internalisolatedtransistorswithgoodmatchinginonepackage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BCR135W

NPNSiliconDigitalTransistor(Switchingcircuit,inverter,interfacecircuit,drivercircuit)

NPNSiliconDigitalTransistor ?Switchingcircuit,inverter,interfacecircuit,drivercircuit ?Builtinbiasresistor(R1=10k?,R2=47K?)

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BCR135W

NPNSiliconDigitalTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BD135

NPNSILICONTRANSISTORS

NPNSiliconTransistors ForAFdriverandoutputstagesofmediumperformance

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BD135

MediumPowerLinearandSwitchingApplications

Features ?ComplementtoBD136,BD138andBD140respectively Applications ?MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BD135

PlasticMediumPowerSiliconNPNTransistor

PlasticMediumPowerSiliconNPNTransistor ...designedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. ?DCCurrentGain—hFE=40(Min)@IC=0.15Adc ?BD135,137,139arecomplementarywithBD136,138,140

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

BD135

NPNSILICONTRANSISTORS

Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BD135

NPNpowertransistors

DESCRIPTION NPNpowertransistorinaTO-126;SOT32plasticpackage.PNPcomplements:BD136,BD138andBD140 FEATURES ?Highcurrent(max.1.5A) ?Lowvoltage(max.80V). APPLICATIONS ?Driverstagesinhi-fiamplifiersandtelevisioncircuits.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BD135

NPNSILICONTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BD135

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1.25W(Tamb=25℃) Collectorcurrent ICM:1.5A Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

BD135

Complementarylowvoltagetransistor

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BD135

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-126package ?Highcurrent ?ComplementtotypeBD136/138/140 APPLICATIONS ?Driverstagesinhigh-fidelityamplifiers andtelevisioncircuits

SAVANTIC

Savantic, Inc.

BD135

PlasticMediumPowerSiliconNPNTransistor

PlasticMediumPowerSiliconNPNTransistor Thisseriesofplastic,medium?powersiliconNPNtransistorsaredesignedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features ?Pb?FreePackagesareAvailable ?DCCurrentGain?hFE=40(Min)@

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BD135

EPITAXIALPLANARNPNTRANSISTOR

GENERALPURPOSEAPPLICATION. FEATURES ?HighCurrent.(Max.:1.5A) ?LowVoltage(Max.:45V) ?DCCurrentGain:hFE=40Min.@IC=0.15A ?ComplementarytoBD136.

KECKEC CORPORATION

KEC株式會社

詳細(xì)參數(shù)

  • 型號:

    BCR135F

  • 制造商:

    INFINEON

  • 制造商全稱:

    Infineon Technologies AG

  • 功能描述:

    NPN Silicon Digital Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
24+
TSFP-3
366000
新進(jìn)庫存/原裝
詢價
INFINEN
23+
SOT523
7936
詢價
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
INFIEON
24+
TSFP-3
2987
絕對全新原裝現(xiàn)貨供應(yīng)!
詢價
INFINEON
24+
SOT-523
25000
一級專營品牌全新原裝熱賣
詢價
Infineo
21+
SOT-323
12588
原裝正品,自己庫存 假一罰十
詢價
INFINEON
23+
TSFP-3
63000
原裝正品現(xiàn)貨
詢價
Infineo
2020+
SOT-523
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
INFINEON/英飛凌
21+
SOT-523
82685
原裝現(xiàn)貨假一賠十
詢價
INFINEON/英飛凌
23+
SOT-323
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
更多BCR135F供應(yīng)商 更新時間2024-12-22 16:30:00