首頁 >BFG520,215>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
BFG520,215 | 包裝：卷帶（TR） 封裝/外殼：TO-253-4，TO-253AA 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 射頻 描述：RF TRANS NPN 15V 9GHZ SOT143B | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | |
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforapplicationsintheRFfrontendintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners(SATV)andrepeateramplifiersinfibre- | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforapplicationsintheRFfrontendintheGHzrange, suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners(SATV)andrepeateramplifiersinfibre | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforapplicationsintheRFfrontendintheGHzrange, suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners(SATV)andrepeateramplifiersinfibre | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforapplicationsintheRFfrontendintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners(SATV)andrepeateramplifiersinfibre- | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPN9GHzwidebandtransistors | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 錦美電子泉州錦美電子有限公司 | JMNIC | ||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendwidebandapplicationsintheGHzrang | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
iscSiliconNPNRFTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
DualNPNwidebandtransistor DESCRIPTION DualtransistorwithtwosiliconNPNRFdiesinasurfacemount6-pinSOT363(S-mini)package.Thetransistoris primarilyintendedforwidebandapplicationsintheGHz-rangeintheRFfrontendofanaloganddigitalcellular phones,cordlessphones,radardetectors,pagersan | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
NPNSiliconRFTransistor(Forhighestgainlownoiseamplifierat1.8GHzand2mA/2V) NPNSiliconRFTransistor Preliminarydata ?Forhighestgainlownoiseamplifierat1.8GHzand2mA/2V OutstandingGa=20dB NoiseFigureF=0.95dB ?Foroscillatorsupto15GHz ?TransitionfrequencyfT=45GHz ?Goldmetalizationforhighreliability ?SIEGET?45-Line | SIEMENSSiemens Ltd 西門子德國西門子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor ?Lownoiseamplifierdesignedforlowvoltageapplications,idealfor1.2Vor1.8Vsupplyvoltage ?Commone.g.incordlessphones,satellitereceiversandoscillatorsupto22GHz ?Highgainandlownoiseathighfrequenciesduetohightransitfrequ | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
TRANZYSTORYNPN [UNITRACEMI] TRANZYSTORYNPN | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC |
產(chǎn)品屬性
- 產(chǎn)品編號：
BFG520,215
- 制造商：
NXP USA Inc.
- 類別：
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極（BJT）- 射頻
- 包裝：
卷帶（TR）
- 晶體管類型：
NPN
- 電壓 - 集射極擊穿（最大值）：
15V
- 頻率 - 躍遷：
9GHz
- 噪聲系數(shù)（dB，不同 f 時的典型值）：
1.1dB ~ 2.1dB @ 900MHz
- 功率 - 最大值：
300mW
- 不同?Ic、Vce?時 DC 電流增益 (hFE)（最小值）：
60 @ 20mA，6V
- 電流 - 集電極 (Ic)（最大值）：
70mA
- 工作溫度：
175°C（TJ）
- 安裝類型：
表面貼裝型
- 封裝/外殼：
TO-253-4，TO-253AA
- 供應(yīng)商器件封裝：
SOT-143B
- 描述：
RF TRANS NPN 15V 9GHZ SOT143B
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NXP |
17+ |
SOT |
5000 |
深圳現(xiàn)貨價格優(yōu)勢 |
詢價 | ||
NXP |
22+ |
SOP |
9852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
NXP/恩智浦 |
2021+ |
SOT143 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
NXP |
22+ |
NA |
45000 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
NXP |
SOT143 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
PHILIPS/飛利浦 |
23+ |
320000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
NXP(恩智浦) |
22+ |
NA |
6000 |
原廠原裝現(xiàn)貨 |
詢價 | ||
NXP(恩智浦) |
23+ |
NA |
6000 |
原裝現(xiàn)貨訂貨價格優(yōu)勢 |
詢價 | ||
NXP |
2022+ |
原廠原包裝 |
8600 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價 | ||
NXP(恩智浦) |
23+ |
N/A |
6000 |
公司只做原裝，可來電咨詢 |
詢價 |
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