首頁 >BFG540W/X T/R>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
iscSiliconNPNRFTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
NPNSILICONRFTRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V,IC=40mA,f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V,IC=10mA,f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V,IC=40mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 時科廣東時科微實業(yè)有限公司 | SKTECHNOLGY | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
NPNSILICONRFTRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V,IC=40mA,f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V,IC=10mA,f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V,IC=40mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 時科廣東時科微實業(yè)有限公司 | SKTECHNOLGY | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導體公司 | nxp | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor ?Forhighestgainandlownoiseamplifier ?OutstandingGms=21.5dBat1.8GHzMinimumnoisefigureNFmin=0.9dBat1.8GHz ?Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads ?QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor ?ForESDprotectedhighgainlownoiseamplifier ?HighESDrobustness typicalvalue1000V(HBM) ?OutstandingGms=21.5dB@1.8GHz MinimumnoisefigureNFmin=0.9dB@1.8GHz ?Pb-free(RoHScompliant)andhalogen-freepackage withvi | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor ?Forhighestgainlownoiseamplifierat1.8GHz ?OutstandingGms=20dB NoiseFigureF=0.9dB ?Goldmetallizationforhighreliability ?SIEGET45-Line | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransisto NPNSiliconRFTransistor* ?ForESDprotectedhighgainlownoiseamplifier ?ExcellentESDperformancetypicalvalue1000V(HBM) ?OutstandingGms=20dB NoiseFigureF=0.9dB ?SIEGET?45-Line ?Pb-free(ROHScompliant)package1) ?QualifiedaccordingAECQ101 *Shorttermdesc | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細參數(shù)
- 型號:
BFG540W/X T/R
- 功能描述:
射頻雙極小信號晶體管 NPN 8V 120mA 9GHZ
- RoHS:
否
- 制造商:
NXP Semiconductors
- 配置:
Single
- 晶體管極性:
NPN
- 最大工作頻率:
7000 MHz 集電極—發(fā)射極最大電壓
- VCEO:
15 V 發(fā)射極 - 基極電壓
- VEBO:
2 V
- 集電極連續(xù)電流:
0.15 A
- 功率耗散:
1000 mW 直流集電極/Base Gain hfe
- 最大工作溫度:
+ 150 C
- 封裝/箱體:
SOT-223
- 封裝:
Reel
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NXP USA Inc. |
24+ |
SC-82A SOT-343 |
9350 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
NXP |
23+ |
原廠封裝 |
12300 |
詢價 | |||
PHI |
24+ |
SOT-343 |
124000 |
詢價 | |||
NXP |
2020+ |
SOT-343 |
200000 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
NXP |
2016+ |
SOT343 |
4529 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
NXP |
23+ |
SOT343R |
7635 |
全新原裝優(yōu)勢 |
詢價 | ||
NXP |
16+ |
NA |
8800 |
誠信經(jīng)營 |
詢價 | ||
NXP |
17+ |
NA |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
NXP(PHILIPS) |
2020+ |
SOT343 |
985000 |
100%進口原裝正品公司現(xiàn)貨庫存 |
詢價 | ||
NXP |
1742+ |
SOT343 |
98215 |
只要網(wǎng)上有絕對有貨!只做原裝正品! |
詢價 |
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