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BFG540W/XR

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG540W/XR

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsinplastic,4-pindual-emitterSOT343NandSOT343Rpackages. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency ?Goldmetallizationensuresexcellentreliability. APPLICATIONS Theyareintend

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BFG540W-X

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG540W-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG540X

iscSiliconNPNRFTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BFG540-X

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V,IC=40mA,f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V,IC=10mA,f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

BFG540-X

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG540-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFG540-XR

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V,IC=40mA,f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V,IC=10mA,f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

BFM540

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

BFP540

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Forhighestgainandlownoiseamplifier ?OutstandingGms=21.5dBat1.8GHzMinimumnoisefigureNFmin=0.9dBat1.8GHz ?Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads ?QualificationreportaccordingtoAEC-Q101available

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP540

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP540

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP540ESD

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?ForESDprotectedhighgainlownoiseamplifier ?HighESDrobustness typicalvalue1000V(HBM) ?OutstandingGms=21.5dB@1.8GHz MinimumnoisefigureNFmin=0.9dB@1.8GHz ?Pb-free(RoHScompliant)andhalogen-freepackage withvi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP540ESD

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP540ESD

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP540F

NPNSiliconRFTransistor

NPNSiliconRFTransistor ?Forhighestgainlownoiseamplifierat1.8GHz ?OutstandingGms=20dB NoiseFigureF=0.9dB ?Goldmetallizationforhighreliability ?SIEGET45-Line

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP540FESD

NPNSiliconRFTransisto

NPNSiliconRFTransistor* ?ForESDprotectedhighgainlownoiseamplifier ?ExcellentESDperformancetypicalvalue1000V(HBM) ?OutstandingGms=20dB NoiseFigureF=0.9dB ?SIEGET?45-Line ?Pb-free(ROHScompliant)package1) ?QualifiedaccordingAECQ101 *Shorttermdesc

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP540FESD

NPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP540FESD

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號:

    BFG540W/X T/R

  • 功能描述:

    射頻雙極小信號晶體管 NPN 8V 120mA 9GHZ

  • RoHS:

  • 制造商:

    NXP Semiconductors

  • 配置:

    Single

  • 晶體管極性:

    NPN

  • 最大工作頻率:

    7000 MHz 集電極—發(fā)射極最大電壓

  • VCEO:

    15 V 發(fā)射極 - 基極電壓

  • VEBO:

    2 V

  • 集電極連續(xù)電流:

    0.15 A

  • 功率耗散:

    1000 mW 直流集電極/Base Gain hfe

  • 最大工作溫度:

    + 150 C

  • 封裝/箱體:

    SOT-223

  • 封裝:

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
NXP USA Inc.
24+
SC-82A SOT-343
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
NXP
23+
原廠封裝
12300
詢價
PHI
24+
SOT-343
124000
詢價
NXP
2020+
SOT-343
200000
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
NXP
2016+
SOT343
4529
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
NXP
23+
SOT343R
7635
全新原裝優(yōu)勢
詢價
NXP
16+
NA
8800
誠信經(jīng)營
詢價
NXP
17+
NA
6200
100%原裝正品現(xiàn)貨
詢價
NXP(PHILIPS)
2020+
SOT343
985000
100%進口原裝正品公司現(xiàn)貨庫存
詢價
NXP
1742+
SOT343
98215
只要網(wǎng)上有絕對有貨!只做原裝正品!
詢價
更多BFG540W/X T/R供應(yīng)商 更新時間2024-12-25 9:09:00