BLM9D2327S-50PBG分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書(shū)PDF中文資料

BLM9D2327S-50PBG屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由安譜隆制造生產(chǎn)的BLM9D2327S-50PBG晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個(gè)端子的半導(dǎo)體器件，器件中電流受電場(chǎng)控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號(hào)或功率的晶體管類(lèi)型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

General description

The BLM9D2327S-50PB(G) is a dual section, 2-stage fully integrated Doherty MMIC

solution using Ampleon’s state of the art GEN9 LDMOS technology. For each section, the

carrier and peaking device, input splitter and output combiner are integrated in a single

package. This multiband device is perfectly suited as general purpose driver or small cell

final in the frequency range from 2300 MHz to 2700 MHz. Available in gull wing or flat lead

outline.

Features and benefits

? Integrated input splitter

? Integrated output combiner

? High efficiency

? Designed for broadband operation (frequency 2300 MHz to 2700 MHz)

? High section-to-section isolation enabling multiple combinations

? Independent control of carrier and peaking bias

? Integrated ESD protection

? Excellent thermal stability

? Source impedance 50 ?; high power gain

? For RoHS compliance see the product details on the Ampleon website

Applications

? RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base

stations in the 2300 MHz to 2700 MHz frequency range. Possible circuit topologies are

the following as also depicted in Section 8.1:

? Dual section or single ended

? Quadrature combined