| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFET?PowerMOSFET(VDSS=100V,RDS(on)=23m廓,ID=57A) VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRF International Rectifier | IRF | ||
57A,100VHeatsinkPlanarN-ChannelPowerMOSFET | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | ||
PowerMOSFET(Vdss=100V,Rds(on)=0.025ohm,Id=57A) VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRF International Rectifier | IRF | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFET?PowerMOSFET(VDSS=100V,RDS(on)=23m廓,ID=57A) VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp | IRF International Rectifier | IRF | ||
AdvancedProcessTechnologyUltraLowOn-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
24+ |
TO220 |
500000 |
行業(yè)低價(jià),代理渠道 |
詢價(jià) | |||
24+ |
SOP |
9 |
詢價(jià) | ||||
24+ |
SOP |
2700 |
全新原裝自家現(xiàn)貨優(yōu)勢! |
詢價(jià) | |||
TOSHIBA/東芝 |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
TOSHIBA/東芝 |
23+ |
TO-220F |
13800 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | ||
TOSHIBA/東芝 |
24+ |
NA/ |
13921 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價(jià) | ||
TOSHIBA/東芝 |
25+ |
TO-220F |
11115 |
原裝正品,假一罰十! |
詢價(jià) | ||
TOSHIBA/東芝 |
24+ |
TO-220F |
60000 |
詢價(jià) | |||
SHINDENG |
23+ |
TO-3PL |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
新電元 |
2315+ |
TO-3PL |
6686 |
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨 |
詢價(jià) |
