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CED11P20

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -200V,-10.5A,RDS(ON)=0.36W@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. ComparabletoAEC-Q101.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED1210

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,62A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED1210A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,53A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED12N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,11A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED12N10

N-Channel 100 V (D-S) MOSFET

FEATURES ?DT-TrenchPowerMOSFET ?175°CJunctionTemperature ?100RgTested APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

CED12N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,11A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED12N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,11A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED12N10L

N-Channel 100 V (D-S) MOSFET

FEATURES ?DT-TrenchPowerMOSFET ?175°CJunctionTemperature ?100RgTested APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

CED12N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,11A,RDS(ON)=175mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=185mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED12P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-100V,-9A,RDS(ON)=315m?@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

供應商型號品牌批號封裝庫存備注價格
CET
24+
TO-251
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
CET
23+
SOT-223
8650
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
TOSHIBA/東芝
23+
TO-252
69820
終端可以免費供樣,支持BOM配單!
 詢價
CET
07+PBF
SOT-223
6560
優(yōu)勢
 詢價
CET
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
CET
23+
SOT-223
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
C
TO-251
22+
6000
十年配單,只做原裝
 詢價
CET/華瑞
21+
SOT-223
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
C
23+
TO-251
6000
原裝正品，支持實單
 詢價
CET
07+
SOT-223
6560
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
更多CED1供應商 更新時間2025-4-22 10:20:00

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