国内视频一区,国产真实交换配乱吟91

首頁 >CEF11N65S>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
CEF11N65S	文件：532.19 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP11N65S	文件：532.19 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU11N65S	文件：519.97 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,8A,RDS(ON)=0.42W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
FCPF11N65	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FCPF11N65-G	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
HMS11N65	文件：729.14 Kbytes Page：7 Pages	N-ChannelSuperJunctionMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司	HMSEMI
HMS11N65F	文件：721.43 Kbytes Page：7 Pages	N-ChannelSuperJunctionMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司	HMSEMI
HMS11N65I	文件：882.25 Kbytes Page：8 Pages	N-ChannelSuperJunctionPowerMOSFET?	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司	HMSEMI
HMS11N65K	文件：882.25 Kbytes Page：8 Pages	N-ChannelSuperJunctionPowerMOSFET?	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司	HMSEMI
ICE11N65FP	文件：978.14 Kbytes Page：4 Pages	N-ChannelEnhancementModeMOSFET	MICROSS Micross Components	MICROSS
ICE11N65FP	文件：596.15 Kbytes Page：9 Pages	N-ChannelEnhancementModeMOSFET	ICEMOS Icemos Technology	ICEMOS
KPS11N65D	文件：389.46 Kbytes Page：6 Pages	ThisSuperJunctionMOSFEThasbettercharacteristics	KECKEC CORPORATION KEC株式會社	KEC
KPS11N65F	文件：390.84 Kbytes Page：6 Pages	ThisSuperJunctionMOSFEThasbettercharacteristics	KECKEC CORPORATION KEC株式會社	KEC
MDF11N65B	文件：787.51 Kbytes Page：6 Pages	N-ChannelMOSFET650V,12A,0.65(ohm) GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF11N65B	文件：1.07166 Mbytes Page：9 Pages	N-Channel650V(D-S)PowerMOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司	VBSEMI
MDF11N65BTH	文件：787.51 Kbytes Page：6 Pages	N-ChannelMOSFET650V,12A,0.65(ohm) GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF11N65BTH	文件：322.39 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
MDFS11N65B	文件：895.6 Kbytes Page：6 Pages	N-ChannelMOSFET650V,12A,0.65(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDFS11N65BTH	文件：322.4 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
MDFS11N65BTH	文件：895.6 Kbytes Page：6 Pages	N-ChannelMOSFET650V,12A,0.65(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP

12 >>>

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市國宇半導(dǎo)體科技有限公司	CEF12N5	C	23+	TO-220F	10000	公司只做原裝正品	詢價
深圳市河鋒鑫科技有限公司	CEF12N5	C	TO-220F	22+	6000	十年配單,只做原裝	詢價
深圳市匯萊威科技有限公司	CEF12N5		CET	TO-220F	68900	原包原標簽100%進口原裝常備現(xiàn)貨!	詢價
易創(chuàng)佳業(yè)科技（深圳）有限公司	CEF12N5	C	23+	TO-220F	6000	原裝正品，支持實單	詢價
深圳市維爾達電子有限公司	CEF12N5	winsemi	2023+	TO-220F	80000	一級代理/分銷渠道價格優(yōu)勢十年芯程一路只做原裝正品	詢價
深圳市賽美科科技有限公司	CEF12N5	CET		TO-220F	50000	一級代理原裝正品假一罰十價格優(yōu)勢長期供貨	詢價
深圳市創(chuàng)新跡電子有限公司	CEF12N5	CET/華瑞	2022+	TO-220F	30000	進口原裝現(xiàn)貨供應(yīng),原裝假一罰十	詢價
深圳市安富世紀電子有限公司	CEF12N5	CET/華瑞	20+	TO-220F	32500	現(xiàn)貨很近!原廠很遠!只做原裝	詢價
深圳市宏捷佳電子科技有限公司	CEF12N5TK12A50D	TOSHIBA	24+	TO-TO-220F	12300	獨立分銷商公司只做原裝誠心經(jīng)營免費試樣正品保證	詢價
深圳宇航軍工半導(dǎo)體有限公司	CEF12N6	CET/華瑞	19+	TO-220F	67724	原廠代理渠道,每一顆芯片都可追溯原廠；	詢價

更多CEF11N65S供應(yīng)商更新時間2024-12-25 14:30:00

相關(guān)規(guī)格書

相關(guān)庫存