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CEM6967

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-3.3A,RDS(ON)=115mW@VGS=-10V. RDS(ON)=150mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM7101

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,4A,RDS(ON)=75m?@VGS=10V. RDS(ON)=100m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM7350

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■100V,2.6A,RDS(ON)=190mΩ@VGS=10V. ■-100V,-2.0A,RDS(ON)=320mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM7350

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. 100V,2.6A,RDS(ON)=190mW@VGS=10V. -100V,-2.0A,RDS(ON)=320mW@VGS=-10V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM7350L

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. 100V,2.6A,RDS(ON)=190mW@VGS=5V. -100V,-2.0A,RDS(ON)=320mW@VGS=-10V. RDS(ON)=180mW@VGS=10V. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM7350L

Dual Enhancement Mode Field Effect Transistor

FEATURES ■100V,2.6A,RDS(ON)=190mΩ@VGS=5V. RDS(ON)=180mΩ@VGS=10V. ■-100V,-2.0A,RDS(ON)=320mW@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Lead-freeplati

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM7808

Enhancement Mode Field Effect Transistor

FEATURES ■30V,6.2A,RDS(ON)=33mΩ@VGS=10V. RDS(ON)=60mΩ@VGS=4.5V. ■-30V,-4.8A,RDS(ON)=55mΩ@VGS=-10V. RDS(ON)=80mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabili

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM7808

Enhancement Mode Field Effect Transistor (2 X N and 2 X P Channel)

30V,6.2A,RDS(ON)=33mW@VGS=10V. FEATURES RDS(ON)=60mW@VGS=4.5V. -30V,-4.8A,RDS(ON)=55mW@VGS=-10V. RDS(ON)=80mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM8206

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,6A,RDS(ON)=20m?@VGS=4.5V. RDS(ON)=30m?@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM8207

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●20V,6A,RDS(ON)=20mΩ@VGS=4.5V. RDS(ON)=30mΩ@VGS=2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

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更多CEM供應商 更新時間2025-4-23 15:01:00

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