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CEM9088

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,8A,RDS(ON)=20mW@VGS=4.5V. RDS(ON)=28mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM9288

N-Channel Enhancement Mode Field Effect Transistor

20V,10A,RDS(ON)=13mW@VGS=4.5V. FEATURES RDS(ON)=20mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM9400

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ●-20V,-2.5A,RDS(ON)=250m?@VGS=-10V.RDS(ON)=400m?@VGS=-4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9400A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ●-30V,-3.4A,RDS(ON)=130m?@VGS=-10V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9407

P-Channel Enhancement Mode MOSFET

FEATURES ●-60V,-3A,RDS(ON)=150m?@VGS=-10V.RDS(ON)=240m?@VGS=-4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9407A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-60V,-3.7A,RDS(ON)=108m?@VGS=-10V.RDS(ON)=150m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9407A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-3.7A,RDS(ON)=125mW@VGS=-10V. RDS(ON)=165mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM9410

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●30V,7A,RDS(ON)=30m?@VGS=10V.RDS(ON)=50m?@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9410A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●30V,7.3A,RDS(ON)=28m?@VGS=10V.RDS(ON)=42m?@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9424

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ●-20V,-7.7A,RDS(ON)=25m?@VGS=-4.5V.RDS(ON)=35m?@VGS=-2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

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更多CEM供應(yīng)商 更新時間2025-4-23 15:01:00

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