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CEM9425

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ●-20V,-7.7A,RDS(ON)=30m?@VGS=-4.5V.RDS(ON)=48m?@VGS=-2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9426

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●20V,10A,RDS(ON)=13.5m?@VGS=4.5V.RDS(ON)=17m?@VGS=2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9430

P-Channel Enhancement Mode MOSFET

FEATURES ●-20V,-5.8A,RDS(ON)=50m?@VGS=-10V.-2A,RDS(ON)=90m?@VGS=-4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9430A

P-Channel Enhancement Mode MOSFET

FEATURES ●-20V,-5.8A,RDS(ON)=50m?@VGS=-10V.-2A,RDS(ON)=90m?@VGS=-4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9433

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ●-20V,-5.4A,RDS(ON)=65m?@VGS=-4.5V.RDS(ON)=100m?@VGS=-2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●SurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9435

P-Channel Enhancement Mode MOSFET

FEATURES ■-30V,-5.3A,RDS(ON)=50m?@VGS=-10V. ???????RDS(ON)=90m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9435

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-5A,RDS(ON)=60mW@VGS=-10V. RDS(ON)=95mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM9435A

P-Channel Enhancement Mode MOSFET

FEATURES ■-30V,-5.3A,RDS(ON)=50m?@VGS=-10V. ???????RDS(ON)=90m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9436A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,6.2A,RDS(ON)=38m?@VGS=10V.RDS(ON)=52m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9436A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,6.2A,RDS(ON)=38mW@VGS=10V. RDS(ON)=52mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

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更多CEM供應(yīng)商 更新時間2025-4-23 15:01:00

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