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首頁 >CEU01N6>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
CEU01N6	文件：85.28 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■650V,0.9A,RDS(ON)=15?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU01N65	文件：400.59 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■650V,1.2A,RDS(ON)=10.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU01N65A	文件：398.58 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■650V,0.9A,RDS(ON)=15Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU01N65A	文件：472.38 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V,0.9A,RDS(ON)=15W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU01N6A	文件：412.24 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V,1.1A,RDS(ON)=12W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU01N6G	文件：414.42 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■600V,1A,RDS(ON)=9.3Ω@VGS=10V. ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
BES01N6	文件：106.42 Kbytes Page：2 Pages	InductiveSensors BES517-398-NO-C-05 Basicfeatures Approval/ConformityCE UKCA cULus WEEE BasicstandardIEC60947-5-2	BalluffBalluff Korea Ltd. 巴魯夫巴魯夫集團	Balluff
CEB01N6	文件：85.87 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB01N6G	文件：374.19 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED01N6	文件：85.28 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,0.9A,RDS(ON)=15?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED01N6A	文件：412.24 Kbytes Page：5 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,1.1A,RDS(ON)=12W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED01N6G	文件：414.42 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■600V,1A,RDS(ON)=9.3Ω@VGS=10V. ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF01N6	文件：85.87 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEF01N6G	文件：374.19 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEI01N6	文件：85.87 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEK01N6G	文件：613.93 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,1A,RDS(ON)=9.3W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. TO-92(Bulk)&TO-92(Ammopack)package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEK01N6G	文件：404.1 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■600V,1A,RDS(ON)=9.3Ω@VGS=10V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TO-92(Bulk)&TO-92(Ammopack)package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP01N6	文件：85.87 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP01N6G	文件：374.19 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET

詳細(xì)參數(shù)

型號：
CEU01N6
功能描述：
600V N Channel MOS

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市永貝爾科技有限公司	CEU01N6	CET	23+	原廠原包	19960	只做進口原裝終端工廠免費送樣	詢價
深圳市威爾健半導(dǎo)體有限公司	CEU01N6	CET/華瑞	23+	TO-252	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市河鋒鑫科技有限公司	CEU01N6	CET/華瑞	2022+	TO-252	3250	原廠代理終端免費提供樣品	詢價
易創(chuàng)佳業(yè)科技（深圳）有限公司	CEU01N6	C	23+	TO252-2	6000	原裝正品，支持實單	詢價
深圳市金芯世紀(jì)電子有限公司	CEU01N6	CET/華瑞	22+	TO-252	100000	代理渠道/只做原裝/可含稅	詢價
深圳市得捷芯城科技有限公司	CEU01N6	CET/華瑞	23+	NA/	2500	優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票	詢價
深圳市創(chuàng)新跡電子有限公司	CEU01N6	CET/華瑞	2022+	TO-252	30000	進口原裝現(xiàn)貨供應(yīng),原裝假一罰十	詢價
深圳市安富世紀(jì)電子有限公司	CEU01N6	CET/華瑞	20+	TO-252	3250	現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝	詢價
齊創(chuàng)科技(上海,北京,青島)有限公司	CEU01N6G	SR	23+	TO-252	5000	原裝正品,假一罰十	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	CEU01N65A	-	23+	NA	10000	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價

更多CEU01N6供應(yīng)商更新時間2025-1-8 15:00:00

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