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ER306-AP

包裝:帶盒(TB) 封裝/外殼:DO-201AD,軸向 類別:分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述:DIODE GEN PURP 600V 3A DO201AD

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

ER306F

SteelRules

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

ER306G

SuperfastRecoveryRectitiers

JUXINGGuangdong Juxing Electronics Technology Co., Ltd.

廣東鉅興電子廣東鉅興電子科技有限公司

EVQPF306K

5NTypeLightTouchSwitches

5NTypeLightTouchSwitches ■Features ●Wealthofproducttypes:Withorwithoutagroundterminal,verticaltype,snap-interminals,etc. ●Canbeautomaticallydip-soldered:Integralmoldingoftheterminalsandmainbodypreventstheescapeofflux. ■RecommendedApplications ●Operat

PanasonicPanasonic Semiconductor

松下松下電器

EVQPF306K

5NTypeSide-operationalLightTouchSwitches

■Features ●Wealthofproducttypes:Horizontaltype,snap-interminals,etc. ●Canbeautomaticallydip-soldered:Integralmoldingoftheterminalsandmainbodypreventstheescapeofflux. ■RecommendedApplications ●Operatingswitchesforotherelectronicequipment

PanasonicPanasonic Semiconductor

松下松下電器

EVQPF306K

5NTypeSide-operationalLightTouchSwitchesWealthofproducttypes:Horizontaltype

PanasonicPanasonic Semiconductor

松下松下電器

F306

HCMOS3.2x2.5mm1.0VSMDOscillator

FOX

Fox Electronics

F306R

HCMOS3.2x2.5mm1.0VSMDOscillator

FOX

Fox Electronics

FDB306

3AMPFASTRECOVERYBRIDGERECTIFIERS

DEC

DIOTEC Electronics Corporation

FDD306P

P-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel1.8VSpecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagement. Features ■–6.7A,–12V.RDS(ON)=28m?@VGS=–4.5VRDS(ON)=41m?@VGS=–2.5VRDS(ON)=90m?@VGS=–1.8V ■Fast

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD306P

P-channelEnhancementModePowerMOSFET

Features ?VDS=-30V,ID=-20A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDN306

P-Channel1.8V(D-S)MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETuses Fairchild’sadvancedlowvoltagePowerTrenchprocess. Ithasbeenoptimizedforbatterypowermanagement applications. Applications ?Batterymanagement ?Loadswitch ?Batteryprotection Features ?–2.6A,–12V.RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDN306P

P-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess. Ithasbeenoptimizedforbatterypowermanagementapplications. Features ?–2.6A,–12V.RDS(ON)=40m?@VGS=–4.5VRDS(ON)=50m?@VGS=–2.5VRDS(ON)=80m?@VGS=–

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDN306P

SingleP-ChannelPowerTrenchMOSFET

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

FDN306P

P-Channel1.8V(D-S)MOSFET

Features ?–2.6A,–12V.RDS(ON)=40mΩ@VGS=–4.5V RDS(ON)=50mΩ@VGS=–2.5V RDS(ON)=80mΩ@VGS=–1.8V ?Fastswitchingspeed ?Highperformancetrenchtechnologyforextremely lowRDS(ON) ?SuperSOTTM-3provideslowRDS(ON)and30higher powerhandlingcapabilitythanSOT

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDN306P

P-Channel1.8V(D-S)MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETuses Fairchild’sadvancedlowvoltagePowerTrenchprocess. Ithasbeenoptimizedforbatterypowermanagement applications. Applications ?Batterymanagement ?Loadswitch ?Batteryprotection Features ?–2.6A,–12V.RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FDN306P-NL

P-Channel20-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

FFM306

SURFACEMOUNTGLASSPASSIVATEDFASTRECOVERYSILICONRECTIFIER(VOLTAGERANGE50to1000VoltsCURRENT3.0Amperes)

RECTRON

Rectron Semiconductor

FFM306

Fastrecoverytype

3.0ASurfaceMountFastRecoveryRectifiers-50-1000V Features ?Batchprocessdesign,excellentpowerdissipationoffersbetterreverseleakagecurrentandthermalresistance. ?Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. ?Highcurrentcapability. ?Fastswitchi

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

FFM306

SurfaceMountFastRecoveryRectifiers

Features: *PlasticpackagehasUnderwritersLaboratory *FlammabilityClassication94V-OUtilizingFlame *RetardantEpoxyMoldingCompound. *Forsurfacemountedapplications. *ExceedsenvironmentalstandardsofMIL-S-19500/228 *Lowleakagecurrent.

WEITRON

Weitron Technology

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    ER306-AP

  • 制造商:

    Micro Commercial Co

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單

  • 包裝:

    帶盒(TB)

  • 二極管類型:

    標(biāo)準(zhǔn)

  • 電流 - 平均整流 (Io):

    3A

  • 速度:

    快速恢復(fù) =< 500ns,> 200mA(Io)

  • 不同?Vr、F 時(shí)電容:

    35pF @ 4V,1MHz

  • 安裝類型:

    通孔

  • 封裝/外殼:

    DO-201AD,軸向

  • 供應(yīng)商器件封裝:

    DO-201AD

  • 工作溫度 - 結(jié):

    -55°C ~ 150°C

  • 描述:

    DIODE GEN PURP 600V 3A DO201AD

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Micro Commercial Co
24+
DO-201AD
9350
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
詢價(jià)
捷捷微
2020+
DO-27
10000
原裝現(xiàn)貨支持BOM配單服務(wù)
詢價(jià)
捷捷微
23+
TO-252
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
PANJ
23+
DO-201AD
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
PANJIT/強(qiáng)茂
22+
DO-201AD
50000
只做原裝假一罰十,歡迎咨詢
詢價(jià)
PANJIT/強(qiáng)茂
24+
DO-201AD
98000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
詢價(jià)
VISHAYMAS
22+23+
DO-201AD
24814
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
詢價(jià)
PANJIT/強(qiáng)茂
21+
DO-201AD
20000
百域芯優(yōu)勢(shì) 實(shí)單必成 可開13點(diǎn)增值稅
詢價(jià)
PANJIT
2018+
DO-201AD
750000
二極管專家長(zhǎng)期大量現(xiàn)貨/公司可開正規(guī)17%增值稅票
詢價(jià)
PANJIT
22+
DO-201AD
57208
進(jìn)口原裝!現(xiàn)貨庫(kù)存
詢價(jià)
更多ER306-AP供應(yīng)商 更新時(shí)間2025-1-11 11:03:00