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IRF7341GTRPbF

HEXFET?PowerMOSFET

Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRF

International Rectifier

IRF7341IPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF7341PBF

GenerationVTechnology

IRF

International Rectifier

IRF7341PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF7341Q

HEXFETPowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,theseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMOSFET’sarea17

IRF

International Rectifier

IRF7341QPBF

HEXFET?PowerMOSFET

Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRF

International Rectifier

IRF7341QPBF

AdvancedProcessTechnology

Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRF

International Rectifier

IRF7341QTRPBF

AdvancedProcessTechnology

Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe

IRF

International Rectifier

IRF7341TR

HEXFET?PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF7341TR

GenerationVTechnology

TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboardspace.Thepa

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    F7341L

  • 制造商：

    TE Connectivity

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IOR
23+
SOP8
11005
專業(yè)優(yōu)勢(shì)供應(yīng)
 詢價(jià)
NA
24+
SOP8
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
VBsemi
21+
S0P8
10065
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
IR
22+
SOP-3.9-8P
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
SOP-3.9-8P
8000
只做原裝現(xiàn)貨
 詢價(jià)
VBsemi
24+
S0P8
9000
只做原裝正品 有掛有貨 假一賠十
 詢價(jià)
IR
23+
SOP-3.9-8P
7000
詢價(jià)
IR
25+
SOP8
17
原裝正品,假一罰十!
 詢價(jià)
IR
24+
SOP8
3500
詢價(jià)
IR
22+
SOP-8
9000
原裝正品
 詢價(jià)
更多F7341L供應(yīng)商 更新時(shí)間2025-4-17 10:41:00

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