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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FCPF11N60-G	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESS CHANGE NOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FCPF11N60NT	文件：922.38 Kbytes Page：10 Pages	N-ChannelMOSFET600V,10.8A,0.299廓 Description TheSupreMOSMOSFET,Fairchild’snextgenerationofhighvoltagesuper-junctionMOSFETs,employsadeeptrenchfillingprocessthatdifferentiatesitfromprecedingmulti-epibasedtechnologies.Byutilizingthisadvancedtechnologyandpreciseprocesscontrol,SupreMOSprovidesworld	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FCPF11N60NT	文件：293.26 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FCPF11N60T	文件：574.49 Kbytes Page：11 Pages	GeneralDescription GeneralDescription SuperFET?is,Fairchild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowonresistanceandlowergatechargeperformance.Thisadvancedtechnologyhasbeentailoredtominimizeconductionlos	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FCPF11N60T	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FMC11N60E	文件：626.98 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET	FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社	Fuji
FMC11N60E	文件：333.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.79Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FMI11N60E	文件：631.65 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET	FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社	Fuji
FMP11N60E	文件：623.42 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET	FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社	Fuji
FMV11N60E	文件：553.4 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET SuperFAP-E3series Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedura	FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社	Fuji
FMV11N60E	文件：313.96 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
HFF11N60S	文件：716.92 Kbytes Page：7 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy	HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 華汕電子器件汕頭華汕電子器件有限公司	Huashan
HMS11N60I	文件：688.54 Kbytes Page：7 Pages	600VN-ChannelMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司	HMSEMI
HMS11N60K	文件：688.54 Kbytes Page：7 Pages	600VN-ChannelMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司	HMSEMI
ISPP11N60CFD	文件：338.75 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.44? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
ISPW11N60CFD	文件：335.24 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤440m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFH11N60	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM11N60	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
KP11N60D	文件：388.24 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,I	KECKEC CORPORATION KEC株式會社	KEC
KP11N60F	文件：390.31 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,I	KECKEC CORPORATION KEC株式會社	KEC

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市雅芯通科技有限公司	FCPF11N60MOS	ON/安森美	24+	N/A	5000	只做原裝正品現(xiàn)貨	詢價
深圳市仟禧電子有限公司	FCPF11N60MOS(場效應(yīng)管)	FAIRCHILD/仙童	22+	TO-220F	20000	保證原裝正品,假一陪十	詢價
深圳市威爾健半導(dǎo)體有限公司	FCPF11N60MOS(場效應(yīng)管)	FAIRCHILD/仙童	23+	TO-220F	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市寶隆宏業(yè)科技有限公司	FCPF11N60MOS(場效應(yīng)管)	FAIRCHILD/仙童	2122+	NA	60000	全新原裝正品現(xiàn)貨,假一賠十	詢價
深圳廊盛科技有限公司	FCPF11N60MOS(場效應(yīng)管)	FAIRCHILD/仙童	23+	TO-220F	20000	原裝正品歡迎咨詢	詢價
深圳市云美電子科技有限公司	FCPF11N60MOS(場效應(yīng)管)	FAIRCHILD/仙童	22+	QFP	37500	只做原裝進(jìn)口現(xiàn)貨	詢價
深圳市星宇佳科技有限公司	FCPF11N60MOS(場效應(yīng)管)	FAIRCHILD/仙童	220F	09	47		詢價
深圳市辰德隆電子科技有限公司	FCPF11N60MOS(場效應(yīng)管)	FAIRCHILD/仙童	23+	TO-220F	6000	不怕路長,只怕志短	詢價
深圳市科芯源微電子有限公司	FCPF11N60MOS(場效應(yīng)管)	FAIRCHILD/仙童	24+	TO220	58000	全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!	詢價
深圳市拓億芯電子有限公司	FCPF11N60N	FAIRCHILD	23+	TO-220屬封	30000	代理全新原裝現(xiàn)貨,價格優(yōu)勢	詢價

更多FCPF11N60-G供應(yīng)商更新時間2024-11-19 14:00:00

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