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FDD6670AL	文件：149.12 Kbytes Page：6 Pages	30VN-ChannelPowerTrenchMOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features ?	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6670AL	文件：351.36 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=84A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FDD6670AL	文件：986.81 Kbytes Page：4 Pages	N-channelAdvancedModePowerMOSFET Features ?VDS=40V,ID=150A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
FDD6670AS	文件：986.8 Kbytes Page：4 Pages	N-channelAdvancedModePowerMOSFET Features ?VDS=40V,ID=150A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
FDD6670AS	文件：107.47 Kbytes Page：7 Pages	30VN-ChannelPowerTrenchSyncFET GeneralDescription TheFDD6670ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6670ASincludesapatentedcombinationofaM	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6670AS_NL	文件：107.47 Kbytes Page：7 Pages	30VN-ChannelPowerTrenchSyncFET GeneralDescription TheFDD6670ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6670ASincludesapatentedcombinationofaM	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDD6670S	文件：986.8 Kbytes Page：4 Pages	N-channelAdvancedModePowerMOSFET Features ?VDS=40V,ID=150A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
FDD6670S	文件：352.15 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=64A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=59mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FDD6670S	文件：97.41 Kbytes Page：7 Pages	30VN-ChannelPowerTrenchSyncFET GeneralDescription TheFDD6670SisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6670SincludesanintegratedSchottkydiodeu	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDP6670AL	文件：413.56 Kbytes Page：5 Pages	N-ChannelLogicLevelPowerTrenchTMMOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomp	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDP6670AL	文件：332.99 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FDP6670AS	文件：355.9 Kbytes Page：3 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=62A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FDP6670AS	文件：789.57 Kbytes Page：7 Pages	30VN-ChannelPowerTrench?SyncFET?	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDP6670AS	文件：100.18 Kbytes Page：6 Pages	30VN-ChannelPowerTrenchSyncFET GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP6670ASincludesanintegratedSchottkyd	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDP6670AS_NL	文件：100.18 Kbytes Page：6 Pages	30VN-ChannelPowerTrenchSyncFET GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP6670ASincludesanintegratedSchottkyd	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDP6670S	文件：93.62 Kbytes Page：5 Pages	30VN-ChannelPowerTrenchSyncFET GeneralDescription ThisMOSFETisdesignedtoreplaceasingleMOSFETandparallelSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDP6670SincludesanintegratedSchottkydi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDP6670S	文件：355.88 Kbytes Page：3 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=62A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FDS6670	文件：423.79 Kbytes Page：6 Pages	100VN-ChannelMOSFET Features ShieldedGateMOSFETTechnology HBMESDprotectionlevel>6kVtypical(Note4) HighperformancetrenchtechnologyforextremelylowRDS(on) Highpowerandcurrenthandlingcapabilityinawidelyused surfacemountpackage VDS=100V ID(atVGS=10V)4.2A RDS(ON)(atVGS=10V)	UMWUMW Rightway Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司(簡(jiǎn)稱UMW?)	UMW
FDS6670A	文件：242.78 Kbytes Page：8 Pages	SingleN-Channel,LogicLevel,PowerTrenchTMMOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDS6670A	文件：138.39 Kbytes Page：5 Pages	SingleN-Channel,LogicLevel,PowerTrenchMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild

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詳細(xì)參數(shù)

型號(hào)：
FDD6670A_Q
功能描述：
MOSFET 30V N-Ch PowerTrench Logic Level
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
瀚佳科技(深圳)有限公司	FDD6670A(Q)	FAIRCHILD	21+		35200	一級(jí)代理/放心采購(gòu)	詢價(jià)
深圳市一線半導(dǎo)體有限公司	FDD6670AL	FAIRCHILD/FSC/仙童飛兆半	24+	TO-252	7670	新進(jìn)庫(kù)存/原裝	詢價(jià)
深圳市星佑電子有限公司	FDD6670AL	仙童	05+	TO-252	12000	原裝進(jìn)口	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	FDD6670AL	Fairchi	17+	TO252	6000	進(jìn)口原裝正品假一賠十,貨期7-10天	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	FDD6670AL	FSC進(jìn)口原	17+	TO-252	6200		詢價(jià)
深圳市永貝爾科技有限公司	FDD6670AL	FAIRCHILD	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	FDD6670AL	FAI	2018+	TO252	6528	只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫(kù)存放心	詢價(jià)
深圳市壹芯創(chuàng)科技有限公司	FDD6670AL	FSC	22+	TO-252	8200	全新進(jìn)口原裝現(xiàn)貨	詢價(jià)
深圳市華來(lái)深電子有限公司	FDD6670AL	FAIRCHI	23+	TO-252	8650	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
深圳市華斯頓科技有限公司	FDD6670AL	FSC	22+23+	TO-252	37444	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)

更多FDD6670A_Q供應(yīng)商更新時(shí)間2024-11-16 18:52:00

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