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FGP7N60RUFDTU

600V, 7A RUF IGBT CO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features ?Highspeedswitching ?Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A ?Highin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGPF7N60LSD

600V,7ALowSaturationIGBTCO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)providesverylowconductionandswitchinglosses.ThedeviceisdesignedforLampapplicationswhereverylowOn-VoltageDropisarequiredfeature. Features ?Lowsaturationvoltage:VCE(sat)=1.4V@IC=7A ?Highinputimp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGPF7N60RUFD

600V,7ARUFIGBTCO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features ?Highspeedswitching ?Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A ?Highin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGPF7N60RUFDTU

600V,7ARUFIGBTCO-PAK

Description FairchildsInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.ThedeviceisdesignedforMotorapplicationswhereruggednessisarequiredfeature. Features ?Highspeedswitching ?Lowsaturationvoltage:VCE(sat)=1.95V@IC=7A ?Highin

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FIR7N60AALG

600VN-ChannelMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR7N60ABPG

600VN-ChannelMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR7N60BPG

AdvancedN-ChPowerMOSFET-I

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR7N60FG

AdvancedN-ChPowerMOSFET-I

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FMF7N60

7A600VNCHANNELISOLATEDPOWERMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

FQA7N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA7N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7.7A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQAF7N60

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB7N60

600VN-ChannelMOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenerg

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB7N60

N-ChannelQFET?MOSFET800V,3.9A,3.6廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB7N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=57A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.023Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQB7N60TM

N-ChannelQFET?MOSFET800V,3.9A,3.6廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB7N60TMWS

N-ChannelQFET?MOSFET800V,3.9A,3.6廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQI7N60

600VN-ChannelMOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenerg

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQI7N60

N-ChannelQFET?MOSFET800V,3.9A,3.6廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQI7N60TU

N-ChannelQFET?MOSFET800V,3.9A,3.6廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FGP7N60RUFDTU

  • 功能描述：

    IGBT 晶體管 600V 7A RUF IGBT CO-PAK

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
FAIRCHI
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
FAIRCHI
07+
TO-220
20
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
FAIRCHILD/仙童
24+
TO220
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
 詢價(jià)
FAIRCHILD
24+
TO-220
8866
詢價(jià)
FAIRCHILD
1822+
TO-220
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
FAIRCHILD
18+
TO-220
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
NEC
23+
TO-252
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢價(jià)
FAIRCHILD/仙童
23+
TO-220
10000
公司只做原裝正品
 詢價(jià)
FAIRCHILD/仙童
TO-220
22+
6000
十年配單,只做原裝
 詢價(jià)
更多FGP7N60RUFDTU供應(yīng)商 更新時(shí)間2024-12-27 9:39:00

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