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FMP03N60E

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機富士電機株式會社

FMP03N60E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FMV03N60E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機富士電機株式會社

H03N60

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H03N60E

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H03N60F

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

IKD03N60RF

TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKD03N60RF

IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKD03N60RF

??C-DFast??RC-DrivesIGBToptimizedforhighswitchingfrequency

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKD03N60RF

RC-DriveandRC-DriveFast

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKD03N60RFA

OptimizedEon,EoffandQrrforlowswitchinglosses

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ILA03N60

LightMOSPowerTransistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ILB03N60

LightMOSPowerTransistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ILD03N60

LightMOSPowerTransistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ILP03N60

LightMOSPowerTransistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

MJU03N60CT

600VSuperJunctionPowerMOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

NDD03N60Z

N-ChannelPowerMOSFET600V,3.6

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDD03N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. ABSOLUTEMAXIMUMRATINGS(Ta=25℃)

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDD03N60Z

N-ChannelPowerMOSFET600V,3.3

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF03N60Z

N-ChannelPowerMOSFET600V,3.6

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號:

    FMP03N60E

  • 制造商:

    FUJI

  • 制造商全稱:

    Fuji Electric

  • 功能描述:

    N-CHANNEL SILICON POWER MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
FUJI/富士電機
23+
N/A
11550
FUJI/富士電機系列在售
詢價
FUJI/富士電機
24+
TO220
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
詢價
FUJI/富士電機
23+
N/A
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
詢價
FCT
43
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
FCT
21+
35200
一級代理/放心采購
詢價
FCT
23+
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
24+
N/A
69000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
TDK
19+20+
8896
全新原裝房間現(xiàn)貨 可長期供貨
詢價
FCT
2021+
銅合金
285000
專供連接器,軍工合格供應(yīng)商!
詢價
FCT
04+11
64
公司優(yōu)勢庫存 熱賣中!
詢價
更多FMP03N60E供應(yīng)商 更新時間2024-12-23 11:00:00