首頁 >FMV03N60E>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

FMV03N60E

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會社

H03N60

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H03N60E

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H03N60F

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficientde

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

IKD03N60RF

TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKD03N60RF

??C-DFast??RC-DrivesIGBToptimizedforhighswitchingfrequency

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKD03N60RF

RC-DriveandRC-DriveFast

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKD03N60RF

IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IKD03N60RFA

OptimizedEon,EoffandQrrforlowswitchinglosses

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ILA03N60

LightMOSPowerTransistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ILB03N60

LightMOSPowerTransistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ILD03N60

LightMOSPowerTransistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ILP03N60

LightMOSPowerTransistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

MJU03N60CT

600VSuperJunctionPowerMOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

NDD03N60Z

N-ChannelPowerMOSFET600V,3.3

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDD03N60Z

N-ChannelPowerMOSFET600V,3.6

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDD03N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. ABSOLUTEMAXIMUMRATINGS(Ta=25℃)

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDF03N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDF03N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDF03N60Z

N-ChannelPowerMOSFET600V,3.6

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號:

    FMV03N60E

  • 制造商:

    FUJI

  • 制造商全稱:

    Fuji Electric

  • 功能描述:

    N-CHANNEL SILICON POWER MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
FUJI
13+
TO-220F
10
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
17
23+
TO-220F
6000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價
17
23+
TO-220F
6000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價
FUJI/富士電機(jī)
23+
N/A
11550
FUJI/富士電機(jī)系列在售
詢價
FUJI/富士電機(jī)
23+
N/A
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu)
詢價
FUJI
24+
TO-220F
5000
全新原裝正品,現(xiàn)貨銷售
詢價
FUJI
22+23+
TO-220F
8000
新到現(xiàn)貨,只做原裝進(jìn)口
詢價
17
24+
TO-220F
23
原裝現(xiàn)貨假一賠十
詢價
VBSEMI/臺灣微碧
23+
TO220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
FUJITSU/富士通
TO-220F
22+
6000
十年配單,只做原裝
詢價
更多FMV03N60E供應(yīng)商 更新時間2025-1-12 14:06:00