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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FMV11N60E	文件：553.4 Kbytes Page：5 Pages	N-CHANNEL SILICON POWER MOSFET SuperFAP-E3series Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedura	FujiFuji Electric 富士電機(jī)富士電機(jī)株式會(huì)社	Fuji
FMV11N60E	文件：313.96 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
HFF11N60S	文件：716.92 Kbytes Page：7 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy	HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 華汕電子器件汕頭華汕電子器件有限公司	Huashan
HMS11N60I	文件：688.54 Kbytes Page：7 Pages	600VN-ChannelMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司	HMSEMI
HMS11N60K	文件：688.54 Kbytes Page：7 Pages	600VN-ChannelMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司	HMSEMI
ISPP11N60CFD	文件：338.75 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.44? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
ISPW11N60CFD	文件：335.24 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤440m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFH11N60	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM11N60	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
KP11N60D	文件：388.24 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,I	KECKEC CORPORATION KEC株式會(huì)社	KEC
KP11N60F	文件：390.31 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,I	KECKEC CORPORATION KEC株式會(huì)社	KEC
KPS11N60D	文件：388.63 Kbytes Page：6 Pages	ThisSuperJunctionMOSFEThasbettercharacteristics	KECKEC CORPORATION KEC株式會(huì)社	KEC
KPS11N60F	文件：390.57 Kbytes Page：6 Pages	ThisSuperJunctionMOSFEThasbettercharacteristics	KECKEC CORPORATION KEC株式會(huì)社	KEC
KSM11N60	文件：2.00345 Mbytes Page：9 Pages	Loweffectiveoutputcapacitance	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
MDF11N60	文件：959.32 Kbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF11N60TH	文件：959.32 Kbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF11N60TH	文件：322.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
MDFS11N60	文件：1.03851 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDFS11N60TH	文件：322.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
MDFS11N60TH	文件：1.03851 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP

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詳細(xì)參數(shù)

型號(hào)：
FMV11N60
制造商：
FUJI
制造商全稱：
Fuji Electric
功能描述：
N-CHANNEL SILICON POWER MOSFET

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市坤融電子科技有限公司	FMV11N60E	FUJI	24+	TO-220F	4000	原裝原廠代理可免費(fèi)送樣品	詢價(jià)
深圳市向鴻偉業(yè)電子有限公司	FMV11N60E	FUJI/富士電機(jī)	2410+	TO-220F	3000	原裝正品.假一賠百.正規(guī)渠道.原廠追溯.	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	FMV11N60E	FUJI	17+	NA	6200	100%原裝正品現(xiàn)貨	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	FMV11N60E	FUJI	2016+	TO-220F	6528	房間原裝進(jìn)口現(xiàn)貨假一賠十	詢價(jià)
深圳市華來深電子有限公司	FMV11N60E	FUJI	23+	TO-220F	8650	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
深圳市納艾斯科技有限公司	FMV11N60E	FUJI	2020+	TO-220	80000	只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價(jià)
瀚佳科技(深圳)有限公司	FMV11N60E	FUJI	24+	TO220	65300	一級(jí)代理/放心購買!	詢價(jià)
艾睿國際（香港）有限公司	FMV11N60E	FUJI/富士電機(jī)	2021+	TO-220F	100500	一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨	詢價(jià)
深圳市航潤創(chuàng)能電子集團(tuán)有限公司	FMV11N60E	FUJI	21+	TO-220F	2849	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市凌旭科技有限公司	FMV11N60E	FUJI	21+	TO-220F	1625	只做原裝正品,不止網(wǎng)上數(shù)量,歡迎電話微信查詢!	詢價(jià)

更多FMV11N60供應(yīng)商更新時(shí)間2025-1-10 15:07:00

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