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FMV12N50ES

N-CHANNEL SILICON POWER MOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FQB12N50

OptimizedSwitchforDiscontinuousCurrentModePowerFactorCorrection

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB12N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQI12N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFBL12N50A

HEXFET?PowerMOSFET

IRF

International Rectifier

IXFA12N50P

PolarPowerMOSFETHiperFET

Polar?PowerMOSFETHiperFET? N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFA12N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH12N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH12N50F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching

IXYS

IXYS Corporation

IXFH12N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FMV12N50ES

  • 制造商：

    FUJI

  • 制造商全稱：

    Fuji Electric

  • 功能描述：

    N-CHANNEL SILICON POWER MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FUJITSU
2016+
TO-220F
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
FUJI進(jìn)口原
17+
TO-220F
6200
詢價(jià)
FUJI
2020+
TO-220F
49
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
24+
TO-220F
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
FUJI
23+
TO-220F
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
FUJI
20+
TO-220F
38560
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
 詢價(jià)
FUJITSU/富士通
21+
TO220F
19000
只做正品原裝現(xiàn)貨
 詢價(jià)
FUJITSU
21+
TO220F
114
原裝現(xiàn)貨假一賠十
 詢價(jià)
F
23+
TO-220F(SLS)
10000
公司只做原裝正品
 詢價(jià)
FUJITSU/富士通
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
更多FMV12N50ES供應(yīng)商 更新時(shí)間2025-2-22 11:10:00

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