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FQB12N50

500V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQB12N50

Optimized Switch for Discontinuous Current Mode Power Factor Correction

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQI12N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFBL12N50A

HEXFET?PowerMOSFET

IRF

International Rectifier

IXFA12N50P

PolarPowerMOSFETHiperFET

Polar?PowerMOSFETHiperFET? N-ChannelEnhancementModeAvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFA12N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH12N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH12N50F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching

IXYS

IXYS Corporation

IXFH12N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFM12N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    FQB12N50

  • 制造商：

    Rochester Electronics LLC

  • 制造商：

    Fairchild Semiconductor Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD
24+
TO-263
109950
詢(xún)價(jià)
仙童
06+
TO-263
3800
原裝
 詢(xún)價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢(xún)價(jià)
FAIRC
24+
TO-263
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
 詢(xún)價(jià)
FAIRCHILD/仙童
2022+
290
全新原裝 貨期兩周
 詢(xún)價(jià)
24+
TO-263
6430
原裝現(xiàn)貨/歡迎來(lái)電咨詢(xún)
 詢(xún)價(jià)
FAIRCHILD
1709+
SOT-263
32500
普通
 詢(xún)價(jià)
ON
21+
TO-263
100
原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
FAIRCHILD/仙童
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
FAIRCHILD/仙童
2022
TO263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún)
 詢(xún)價(jià)
更多FQB12N50供應(yīng)商 更新時(shí)間2025-3-14 16:30:00

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