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FSGYC260R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFET

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSJ260D

44A,200V,0.050Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSJ260R

44A,200V,0.050Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSMD260R

SurfaceMountablePTCResettableFuse:FSMD1812Series

FUZETECFuzetec Technology Co., Ltd.

富致科技富致科技股份有限公司

FSMD260R

SurfaceMountablePTCResettableFuse:FSMD1812Series

RFERFE international

RFE國(guó)際公司RFE國(guó)際股份有限公司

FSPYC260F

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYC260R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSYC260D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSYC260R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FT260

FutureTechnologyDevicesInternationalLtd.

FTDIFuture Technology Devices International Ltd.

飛特帝亞英商飛特帝亞有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FP260

  • 功能描述：

    鉗型萬(wàn)用表及配件 FUSE 2A/600V 4 PACK

  • RoHS：

    否

  • 制造商：

    Fluke

  • 準(zhǔn)確性：

    2 %

  • 測(cè)距：

    400 A

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
AUG
23+
65480
詢價(jià)
ELPIDA
25+23+
BGA
12640
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
ELPIDA
23+
BGA
14481
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
24+
N/A
52000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
566
原裝現(xiàn)貨
 詢價(jià)
JXT
24+
SMD
990000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
JXT
25+
SMD
4258
原裝正品 價(jià)格優(yōu)勢(shì)
 詢價(jià)
JXT
16+
SMD
2589
全新、原裝
 詢價(jià)
23+
17ROHS
8899
原裝正品--可開(kāi)增值稅發(fā)票量大可訂貨
 詢價(jià)
原裝
20+
原裝
56200
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢價(jià)
更多FP260供應(yīng)商 更新時(shí)間2025-4-12 9:19:00

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