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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
FQP12N60	文件：65.36 Kbytes Page：1 Pages	600VN-ChannelMOSFET DESCRIPTION TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy	TGS Tiger Electronic Co.,Ltd	TGS
FQP12N60	文件：532.52 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP12N60	文件：302.31 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQP12N60C	文件：873.99 Kbytes Page：10 Pages	FQP12N60C/FQPF12N60C Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP12N60C	文件：1.43803 Mbytes Page：10 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP12N60C	文件：1.07433 Mbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
FQP12N60C	文件：1.12119 Mbytes Page：10 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF12N60	文件：1.43803 Mbytes Page：10 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF12N60	文件：549.59 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF12N60C	文件：1.12119 Mbytes Page：10 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF12N60C	文件：873.99 Kbytes Page：10 Pages	FQP12N60C/FQPF12N60C Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF12N60C	文件：1.43803 Mbytes Page：10 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF12N60C	文件：1.07433 Mbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
FQPF12N60C	文件：278.21 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.65Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQPF12N60C	文件：303.02 Kbytes Page：2 Pages	iscSiliconNPNPowerTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.65Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQPF12N60CT	文件：804.99 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF12N60T	文件：555.07 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FSA12N60A	文件：54.71 Kbytes Page：6 Pages	N-ChannelEnhancement InPowerProductLines	ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商	ETC1
H12N60	文件：156.36 Kbytes Page：4 Pages	N-ChannelPowerMOSFET(600V,12A) Features ?H10N60FisaHighvoltageNChannelenhancementmodepowerMOSFETchipfabricatedinadvancedsiliconepitaxialplanartechnology ?Advancedterminationschemetoprovideenhancedvoltageblockingcapability ?AvalancheEnergySpecified ?SourcetoDrainDiodeRecoveryTimeCo	HSMCHi-Sincerity Mocroelectronics 華昕華昕科技有限公司	HSMC
HFH12N60	文件：614.17 Kbytes Page：6 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy	HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 華汕電子器件汕頭華汕電子器件有限公司	Huashan

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詳細(xì)參數(shù)

型號(hào)：
FQI12N60CTU
功能描述：
MOSFET 600V N-Channel Adv Q-FET C-Series
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市億智騰科技有限公司	FQI12N60CTU	FAIRCHILD/仙童	24+	TO220-3	3580	原裝現(xiàn)貨/15年行業(yè)經(jīng)驗(yàn)歡迎詢價(jià)	詢價(jià)
深圳市高捷芯城科技有限公司	FQI12N60CTU	onsemi(安森美)	23+	I2PAK(TO-262)	8498	支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。	詢價(jià)
深圳市鼎盛源芯科技有限公司	FQI12N60CTU	harris	16+	原廠封裝	10000	全新原裝正品,代理優(yōu)勢(shì)渠道供應(yīng),歡迎來(lái)電咨詢	詢價(jià)
深圳市正邁科技有限公司	FQI12N60CTU	FSC/ON	23+	原包裝原封 □□	2882	原裝進(jìn)口特價(jià)供應(yīng) QQ 1304306553 更多詳細(xì)咨詢庫(kù)存	詢價(jià)
深圳市納艾斯科技有限公司	FQI12N60CTU	FSC	2020+	TO-220-	80000	只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價(jià)
深圳市航潤(rùn)創(chuàng)能電子集團(tuán)有限公司	FQI12N60CTU	FSC	21+	TO-220-3	85	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市國(guó)宇半導(dǎo)體科技有限公司	FQI12N60CTU	FAIRCHILD仙童	23+	I2PAK	10000	公司只做原裝正品	詢價(jià)
深圳市河鋒鑫科技有限公司	FQI12N60CTU	Fairchild/ON	22+	TO2623 Long Leads I2Pak TO262A	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
深圳市威雅利發(fā)展有限公司	FQI12N60CTU	FSC	06+	TO-220-3	85	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)
深圳市鵬順微電子科技有限公司	FQI12N60CTU	ON Semiconductor	2022+	TO-262-3,長(zhǎng)引線,I2Pak,TO-26	38550	全新原裝支持表配單中國(guó)著名電子元器件獨(dú)立分銷	詢價(jià)

更多FQI12N60CTU供應(yīng)商更新時(shí)間2025-1-8 13:36:00

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