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MTD1N50E

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

MTD1N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP1N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP1N50E

N??hannelTO??20PowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP1N50E

TMOSPOWERFET1.0AMPERES500VOLTSRDS(on)=5.0OHM

TMOSE?FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PHP1N50E

PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHX1N50E

PowerMOStransistorIsolatedversionfoPHP1N50E

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinafullpack,plasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePow

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

RM1N50

Highvoltagelinear120/220V6Wfullvoltagefilamentlampsolution

REACTORShaanxi Reactor Microelectronics Co., Ltd.

亞成微陜西亞成微電子股份有限公司

RM1N50

Highvoltagelinear120/220V50Wfullvoltagefloodlightsolution

REACTORShaanxi Reactor Microelectronics Co., Ltd.

亞成微陜西亞成微電子股份有限公司

RM1N50

Highvoltagelinear120/220V10Wfullvoltagebulblampsolution

REACTORShaanxi Reactor Microelectronics Co., Ltd.

亞成微陜西亞成微電子股份有限公司

詳細參數

  • 型號：

    FQU1N50

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    500V N-Channel MOSFET

供應商型號品牌批號封裝庫存備注價格
仙童
05+
TO-251
5000
原裝進口
 詢價
FAIRCHILD
24+
TO-251(IPAK)
8866
詢價
FAIRCHILD
23+
TO-251
6680
全新原裝優(yōu)勢
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FAIRC
24+
TO-251(IPAK)
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
ON/安森美
23+
TO-220
69820
終端可以免費供樣,支持BOM配單!
 詢價
F
22+
I-PAK
6000
十年配單,只做原裝
 詢價
FAIRCHILD/仙童
23+
TO-251
67307
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
FAIRCHILD
2023+環(huán)保現(xiàn)貨
TO-251(IPAK)
20000
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
 詢價
FSC
23+
TO-251
8560
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
更多FQU1N50供應商 更新時間2025-3-14 14:54:00

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