零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
N-ChannelEnhancementInsulatedGateBipolarTransistor Features ?Lowsaturationvoltage,Vce(on)(typ)=2.3V@Vge=15V ?Highinputimpedance ?Fieldstoptrenchtechnologyoffersuperior conductionandswitchingperformances, ?Highspeedswitching Applications ?InductionheatingandMicrowaveoven ?Softswitchingapplications | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 華汕電子器件汕頭華汕電子器件有限公司 | Huashan | ||
34A,1200VN-ChannelIGBT Description TheHGTG20N120E2isaMOSgated,highvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvari | Intersil Intersil Corporation | Intersil | ||
63A,1200V,NPTSeriesN-ChannelIGBT 63A,1200V,NPTSeriesN-ChannelIGBT TheHGTG20N120CNisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETa | Intersil Intersil Corporation | Intersil | ||
63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | Intersil Intersil Corporation | Intersil | ||
63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 63A,1200V,NPTSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG20N120CNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.Thisdevicehas | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
H&MNPTIGBTsofferlowerlossesandhigherenergy | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
KEDAPTIGBTsofferlowerlossesandhigherenergyefficiencyforapplication | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
HighSpeed2-Technology ?Designedfor: -TV–HorizontalLineDeflection ?2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
ReverseConductingIGBTwithmonolithicbodydiode Features: ?PowerfulmonolithicBodyDiodewithverylowforwardvoltage ?Bodydiodeclampsnegativevoltages ?TrenchandFieldstoptechnologyfor1200Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior ?NPTtechnologyoffers | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO 247 |
160969 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
2023+ |
TO-247 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
IR |
23+ |
TO-247 |
10000 |
公司只做原裝正品 |
詢價 | ||
IR |
2022+ |
TO-247 |
12888 |
原廠代理 終端免費提供樣品 |
詢價 | ||
IR |
22+ |
TO-247 |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
IR |
2023+ |
TO-3P |
4675 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價 | ||
IR |
23+ |
TO-247 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-247 |
7000 |
詢價 | |||
IR |
24+ |
TO-247 |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
N/A |
23+ |
TO247 |
28888 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 |
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