GAN3R2-100CBE中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1. General description

The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15

bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering

superior performance.

2. Features and benefits

? Enhancement mode - normally-off power switch

? Ultra high frequency switching capability

? No body diode

? Low gate charge, low output charge

? Qualified for standard applications

? ESD protection

? RoHS, Pb-free, REACH-compliant

? High efficiency and high power density

? Wafer Level Chip-Scale Package (WLCSP) 3.5 mm x 2.13 mm

3. Applications

? High power density and high efficiency power conversion

? AC-to-DC converters, (secondary stage)

? High frequency DC-to-DC converters in 48 V systems

? Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers

? Datacom and telecom (AC-to-DC and DC-to-DC) converters

? Motor drives

? LiDAR (non-automotive)

? Class D audio amplifiers