| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
GT5 | USCAR specified connector as SAE/USCAR-19 | HIROSEHirose Electric Company 廣瀨日本廣瀨電機(jī)株式會(huì)社 | HIROSE | |
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT The4thGeneration CurrentResonanceInverterSwitchingApplications ?FRDincludedbetweenemitterandcollector ?Enhancement-mode ?Highspeed:tf=0.30μs(typ.)(IC=60A) ?Lowsaturationvoltage:VCE(sat)=1.8V(typ.)(IC=60A) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC( | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT HighPowerSwitchingApplications FastSwitchingApplications ?Fourth-generationIGBT ?Enhancementmodetype ?Fastswitching(FS):Operatingfrequencyupto50kHz(reference) ?Highspeed:tf=0.05μs(typ.) ?Lowswitchingloss:Eon=1.30mJ(typ.) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Current Resonance Inverter Switching Application CurrentResonanceInverterSwitchingApplication ?Enhancementmodetype ?Highspeed:tf=0.16μs(typ.)(IC=60A) ?Lowsaturationvoltage:VCE(sat)=1.9V(typ.)(IC=60A) ?Fourth-generationIGBT ?TO-3P(N)(Toshibapackagename) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) HIGHPOWERSWITCHINGAPPLICATIONS MOTORCONTROLAPPLICATIONS The3rdGeneration Enhancement?Mode HighSpeed:tf=0.30μs(Max.) LowSaturationVoltage:VCE(sat)=2.7V(Max.) FRDIncludedBetweenEmitterandCollector | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
N CHANNEL MOS TYPE (THE 4TH CENERATION CURRENT RESONACE INVERTER SWITHCING APPLICATIONS) DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC( | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT HighPowerSwitchingApplications FastSwitchingApplications ?FourthgenerationIGBT ?Enhancementmodetype ?Fastswitching(FS):Operatingfrequencyupto50kHz(reference) ?Highspeed:tf=0.05μs(typ.) ?Lowswitchingloss:Eon=1.30mJ(typ.) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application CurrentResonanceInverterSwitchingApplication ?Enhancementmodetype ?Highspeed:tf=0.19μs(typ.)(IC=50A) ?Lowsaturationvoltage:VCE(sat)=1.9V(typ.)(IC=50A) ?FRDincludedbetweenemitterandcollector ?FourthgenerationIGBT ?TO-3P(N)(Toshibapackagename) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Current Resonance Inverter Switching Application Fourth Generation IGBT DiscreteIGBTs(PDF:875KB)03/2011: http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 *GT30G124 -BreakdownVoltageVCES(V)@Ta=25C:430V -IGBTCurrentRatingIC(A)@Ta=25C:200A *GT30J124 -BreakdownVoltageVCES(V)@Ta=25C:600V -IGBTCurrentRatingIC( | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
IGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.2V@IC=50A ·HighSpeedSwitching ·LowPowerLoss APPLICATIONS ·IndustrialPowerSupplies ·IndustrialDrives ·SolarInverters | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA |
詳細(xì)參數(shù)
- 型號(hào)：
GT5
- 制造商：
3M Electronic Products Division
- 功能描述：
FEET STICK ON BLACK PK9
- 功能描述：
FEET, STICK ON, BLACK, PK9
- 功能描述：
FEET, STICK ON, BLACK, PK9; Overall
- Length：
32.4mm; Spacer
- Material：
Polyurethane; External
- Width：
32.4mm; External
- Length/Height：
6.4mm ;RoHS
- Compliant：
Yes
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TOS |
23+ |
TO-3P |
9526 |
詢價(jià) | |||
TOSH |
05+ |
TO263 |
2110 |
全新原裝進(jìn)口自己庫存優(yōu)勢(shì) |
詢價(jià) | ||
TOS |
23+ |
IGBT單管TO-3P |
2000 |
進(jìn)口原裝現(xiàn)貨庫存,特價(jià),只售原裝正品 |
詢價(jià) | ||
TOSHIBA |
05+ |
TO-3PL |
10000 |
全新原裝 絕對(duì)有貨 |
詢價(jià) | ||
TOSHIBA |
2015+ |
DIP/SOP |
19889 |
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣! |
詢價(jià) | ||
IGBTTO-264 |
16+ |
原廠封裝 |
7980 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
TOS |
1215+ |
TO-3P |
150000 |
全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng). |
詢價(jià) | ||
SINYORK |
24+ |
SOD-1231206 |
9100 |
新進(jìn)庫存/原裝 |
詢價(jià) | ||
TOSHIBA |
23+ |
TO3P247 |
7635 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
TOSHIBA |
4 |
SOP |
20 |
全新原裝現(xiàn)貨 |
詢價(jià) |
相關(guān)規(guī)格書
更多- GT500073132
- GT50JR21(STA1,E,S)
- GT5-1P/S-R
- GT5-1P-DS(A)(70)
- GT5-1S-HU
- GT5-1S-HU(B)
- GT5-2428/1.1-2.2SCF
- GT5-2428/1.6-2.9PCF(70)
- GT5-2S-HU
- GT5A-1PP-HU(70)
- GT5E-1P-DS(71)
- GT5N-2PP-HU
- GT5P-1PP-HU(70)
- GT5P-N60SA100
- GT5S-1PP-HU(70)
- GT5Y-2SN1A100
- GT5Y-2SN1D12
- GT5Y-2SN3A100
- GT5Y-4SN3A100
- GT7-2022PCF(70)
- GT7A
- GT7A-2022SCF(70)
- GT8-14DS-2C
- GT8-2428SC(70)
- GT8B-2428SCF
- GT8E-10S-HU
- GT8E-12DP-DS(28)
- GT8E-16DP-DS
- GT8E-16DS-HU
- GT8E-2022SC
- GT8E-2022SCF(01)
- GT8E-20DS-HU
- GT8E-24DP-DS
- GT8E-2P-2H(70)
- GT8E-2P-DSA
- GT8E-2S-2C
- GT8E-3P-DS
- GT8E-3S-HU
- GT8E-4P-DS
- GT8E-4P-HU
- GT8E-5P-DS
- GT8E-5S-HU
- GT8E-6P-DSA
- GT8E-7P-DS
- GT8E-7S-HU
相關(guān)庫存
更多- GT5040
- GT50JR22(STA1,E,S)
- GT5-1P-DS(70)
- GT5-1PP-HU(70)
- GT5-1S-HU(A)
- GT5-1S-HU(C)
- GT5-2428/1.6-2.5SCF(70)
- GT5-2428/1.6-2.9SCF(70)
- GT5-4S-HU
- GT5E-1P-DS(70)
- GT5H-1PP-HU(10)
- GT5N-4PP-HU
- GT5P-N10SAD24
- GT5P-N6SA100
- GT5W-1S-HU
- GT5Y-2SN1A200
- GT5Y-2SN1D24
- GT5Y-2SN3A200
- GT5Y-4SN6D24
- GT7-2022SCF(70)
- GT7A-2022PCF(70)
- GT8
- GT8-2022SCF
- GT8-2428SCF(70)
- GT8E-10P-DS
- GT8E-12DP-DS
- GT8E-12DS-HU
- GT8E-16DP-DS(28)
- GT8E-2022PCF
- GT8E-2022SCF
- GT8E-20DP-DS
- GT8E-2428PCF
- GT8E-24DS-HU
- GT8E-2P-DS
- GT8E-2P-DSA(11)
- GT8E-3P-2H
- GT8E-3P-HU
- GT8E-4P-2H
- GT8E-4P-DSA
- GT8E-4S-HU
- GT8E-5P-DSA
- GT8E-6P-DS
- GT8E-6S-HU
- GT8E-7P-DSA
- GT8E-8DS-2C
