GTRA412852FC-V1-R0中文資料WOLFSPEED數(shù)據(jù)手冊PDF規(guī)格書

Description

The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input and output matching, high

efficiency, and a thermally-enhanced package with earless flange.

Features

? GaN on SiC HEMT technology

? Input and output matched

? Typical pulsed CW performance, 4100 MHz, 48 V,

10 μs pulse width, 100 μs PP

- Output power at P3dB = 235 W

- Gain = 10 dB

- Efficiency = 45

? Capable of handling 10:1 VSWR @48 V, 30 W

(WCDMA) output power

? Human Body Model Class 1A (per ANSI/ESDA/

JEDEC JS-001)

? Low thermal resistance

? Pb-free and RoHS compliant