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CEB170N10S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF170N10S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP170N10S

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FIR170N10PG

100VN-ChannelPowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

FIR170N10RG

N-ChannelPowerMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

IXFH170N10P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH170N10P

PolarHiperFETPowerMOSFET

Polar?HiperFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?Spac

IXYS

IXYS Corporation

IXFK170N10

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleMOSFETDie Features ?Internationalstandardpackages ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwi

IXYS

IXYS Corporation

IXFK170N10P

PolarHiperFETPowerMOSFET

Polar?HiperFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?Spac

IXYS

IXYS Corporation

IXFN170N10

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleMOSFETDie Features ?Internationalstandardpackages ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwi

IXYS

IXYS Corporation

IXTK170N10P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTK170N10P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTQ170N10P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTT170N10P

PolarTMPowerMOSFET

IXYS

IXYS Corporation

IXTT170N10P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

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26
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HUAJIA
21+
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6000
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HuaJia
22+
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2897
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HUAJIA
22+
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12245
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HUAJIA
22+
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50000
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HUAJIA
C
25A
36
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HUAJIA
23+
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6000
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TC/德昌
2023+
5D28
48000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
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Brother International
2022+
1
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三菱
22+
NA
1
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更多HGM170N10AL供應(yīng)商 更新時間2025-1-11 16:06:00