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HGT1S12N60B3DS中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

HGT1S12N60B3DS
廠商型號(hào)

HGT1S12N60B3DS

功能描述

27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

文件大小

117.6 Kbytes

頁(yè)面數(shù)量

7 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-25 18:10:00

HGT1S12N60B3DS規(guī)格書(shū)詳情

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The diode used in anti-parallel with the IGBT is the development type TA49188.

Features

? 27A, 600V, TC = 25°C

? 600V Switching SOA Capability

? Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150°C

? Short Circuit Rating

? Low Conduction Loss

? Hyperfast Anti-Parallel Diode

? Related Literature

??? - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards

產(chǎn)品屬性

  • 型號(hào):

    HGT1S12N60B3DS

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

  • 制造商:

    Harris Corporation

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