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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
HMS21N60F	文件：1.06048 Mbytes Page：8 Pages	N-Channel Super Junction Power MOSFET II	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司	HMSEMI
IRFP21N60L	文件：237.92 Kbytes Page：11 Pages	PowerMOSFET FEATURES ?Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications ?Lowergatechargeresultsinsimpledrive requirement ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?Highergatevoltagethresholdoffersimprovednoise immunity ?Materialcategorizati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFP21N60L	文件：197.26 Kbytes Page：9 Pages	SMPSMOSFET FEATURES ?SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. ?LowerGatechargeresultsinsimpledriverequirements. ?EnhanceddV/dtcapabilitiesofferimprovedruggedness. ?HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS ?Zero	IRF International Rectifier	IRF
IRFP21N60L	文件：162.12 Kbytes Page：8 Pages	PowerMOSFET PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFP21N60L	文件：444.97 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor ?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.32?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFP21N60LPBF	文件：162.12 Kbytes Page：8 Pages	PowerMOSFET PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFP21N60LPBF	文件：234.53 Kbytes Page：9 Pages	SMPSMOSFET FEATURES ?SuperfastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications. ?LowerGatechargeresultsinsimpledriverequirements. ?EnhanceddV/dtcapabilitiesofferimprovedruggedness. ?HigherGatevoltagethresholdoffersimprovednoiseimmunity. APPLICATIONS ?Zero	IRF International Rectifier	IRF
IRFR21N60L	文件：163.43 Kbytes Page：9 Pages	SMPSMOSFET	IRF International Rectifier	IRF
IXFH21N60	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM21N60	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFZ21N60	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
MGP21N60E	文件：123.26 Kbytes Page：5 Pages	InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MGP21N60E	文件：127.77 Kbytes Page：6 Pages	InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications	MotorolaMotorola, Inc 摩托羅拉加爾文制造公司	Motorola
MGW21N60ED	文件：152.75 Kbytes Page：6 Pages	InsulatedGateBipolarTransistor ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbotha	MotorolaMotorola, Inc 摩托羅拉加爾文制造公司	Motorola
MGW21N60ED	文件：152.61 Kbytes Page：6 Pages	InsulatedGateBipolarTransistor ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbotha	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
SIHA21N60EF	文件：186.66 Kbytes Page：8 Pages	EFSeriesPowerMOSFETwithFastBodyDiode	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHA21N60EF	文件：319.87 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
SIHA21N60EF	文件：167.73 Kbytes Page：8 Pages	EFSeriesPowerMOSFETwithFastBodyDiode FEATURES ?FastbodydiodeMOSFETusingEseries technology ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM):RonxQg ?Lowinputcapacitance(Ciss) ?IncreasedrobustnessduetolowQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:forde	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHB21N60EF	文件：215.76 Kbytes Page：9 Pages	EFSeriesPowerMOSFETwithFastBodyDiode	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
SIHB21N60EF	文件：322.66 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
貿(mào)澤芯城（深圳）電子科技有限公司	HMS21N65A	HM	23+	TO3PN	28888	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種	詢價(jià)
深圳市鵬和科技有限公司	HMS25632J2V-12	HANBIT	24+	SMD	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價(jià)
上海專毅電子科技有限公司	HMS25632J2V-12	HANBIT	17+	SMD	12000	只做全新進(jìn)口原裝,現(xiàn)貨庫存	詢價(jià)
上海意淼電子科技有限公司	HMS25632J2V-12	NS	23+	NA	6500	全新原裝假一賠十	詢價(jià)
深圳市芯誠實(shí)創(chuàng)科技有限公司	HMS25632J2V-12	HANBIT	2022	SMD	2300	原裝現(xiàn)貨,誠信經(jīng)營!	詢價(jià)
深圳市匯萊威科技有限公司	HMS25632J2V-12		HANBIT	SMD	68900	原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!	詢價(jià)
深圳市羿芯誠電子有限公司	HMS25632J2V-12	HANBIT	23+	SMD	3000	全新原裝現(xiàn)貨優(yōu)勢庫存	詢價(jià)
深圳市賽美科科技有限公司	HMS25632M8B-20	Hanbit		NA	8560	一級代理原裝正品假一罰十價(jià)格優(yōu)勢長期供貨	詢價(jià)
深圳市明嘉萊科技有限公司	HMS25632M8B-20	HANBIT	2000	NA	880000	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)
深圳市振宏微科技有限公司	HMS256Z4N35	NSC	23+	NA	550	專做原裝正品,假一罰百!	詢價(jià)

更多HMS21N60F供應(yīng)商更新時(shí)間2025-1-11 11:09:00

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