首頁>HY57V161610ET-10I>規(guī)格書詳情
HY57V161610ET-10I中文資料海力士數(shù)據(jù)手冊PDF規(guī)格書
相關芯片規(guī)格書
更多HY57V161610ET-10I規(guī)格書詳情
DESCRIPTION
THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16.
FEATURES
? Single 3.0V to 3.6V power supply
? All device pins are compatible with LVTTL interface
? JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin
pitch
? All inputs and outputs referenced to positive edge of system
clock
? Data mask function by UDQM/LDQM
? Internal two banks operation
? Auto refresh and self refresh
? 4096 refresh cycles / 64ms
? Programmable Burst Length and Burst Type
- 1, 2, 4, 8 and Full Page for Sequence Burst
- 1, 2, 4 and 8 for Interleave Burst
? Programmable CAS Latency ; 1, 2, 3 Clocks
產(chǎn)品屬性
- 型號:
HY57V161610ET-10I
- 制造商:
HYNIX
- 制造商全稱:
Hynix Semiconductor
- 功能描述:
2 Banks x 512K x 16 Bit Synchronous DRAM
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
HYNIX |
19+ |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | |||
HYNIX |
23+ |
SSOP |
5000 |
原裝正品,假一罰十 |
詢價 | ||
HYNIX |
24+ |
SSOP |
25500 |
授權代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售 |
詢價 | ||
HYNIX |
22+ |
SSOP |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應,支持實單! |
詢價 | ||
HYNIX |
2016+ |
TSSOP |
6523 |
只做進口原裝現(xiàn)貨!假一賠十! |
詢價 | ||
HY |
2021+ |
TSOP |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
HY |
23+ |
TSOP |
5000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
HYNIX |
24+ |
TSSOP |
35200 |
一級代理/放心采購 |
詢價 | ||
HY |
24+ |
TSOP |
752 |
詢價 | |||
HYNIX |
2016+ |
TSSOP |
9000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 |