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HY57V161610ET-I中文資料海力士數(shù)據(jù)手冊PDF規(guī)格書
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HY57V161610ET-I規(guī)格書詳情
DESCRIPTION
THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16.
FEATURES
? Single 3.0V to 3.6V power supply
? All device pins are compatible with LVTTL interface
? JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin
pitch
? All inputs and outputs referenced to positive edge of system
clock
? Data mask function by UDQM/LDQM
? Internal two banks operation
? Auto refresh and self refresh
? 4096 refresh cycles / 64ms
? Programmable Burst Length and Burst Type
- 1, 2, 4, 8 and Full Page for Sequence Burst
- 1, 2, 4 and 8 for Interleave Burst
? Programmable CAS Latency ; 1, 2, 3 Clocks
產(chǎn)品屬性
- 型號：
HY57V161610ET-I
- 制造商：
HYNIX
- 制造商全稱：
Hynix Semiconductor
- 功能描述：
2 Banks x 512K x 16 Bit Synchronous DRAM
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
HY |
23+ |
NA/ |
14 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
HY |
23+ |
TSOP |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價 | ||
22+ |
5000 |
詢價 | |||||
HY |
23+ |
TSSOP |
2602 |
全新原裝現(xiàn)貨特價/假一罰十 |
詢價 | ||
Hynix |
24+ |
TSOP |
5000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
HYNIX |
22+23+ |
TSOP50 |
6769 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
HY |
TSSOP |
68900 |
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
HYUNDAI |
2004 |
TSOP |
460 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 | ||
HYUNDAI |
23+ |
TSOP |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
HY |
1948+ |
TSOP |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 |
